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E\PCOS 2016
During the E\PCOS 2016 Symposium, 17 invited papers and 20 contributed papers from all over the world were presented. In the Poster Session, 18 posters were contributed..
Papers and Posters presented at E\PCOS 2016:
Ovshinsky Leactureship award 2016
HARP: A Highly Sensitive Pickup Tube Target Using Avalanche Multiplication in Amorphous Selenium
Kenkichi Tanioka, Medical Imaging Consortium, Japan
Doped Chalcogenide Glasses in Digital Direct Conversion Flat Panel X-Ray Imagers for Mammography: A Review
Safa Kasap, Universisty of Saskatchewan, Canada
SESSION-1 New Applications & Optics
Reconfigurable nanophotonic devices using phase-change materials
Wolfram H. P. Pernice, University of Münster, Germany
Femtosecond lattice and spin dynamics in topological phase-change materials
Muneaki Hase, Tsukuba University, Japan
Ultrafast control of resonant bonding state in PCMs
Simon Wall, CFO— Barcelona, Spain
Phase-change meta-photonics
David Wright, University of Exeter, UK
Integrated phase-change photonics for all-optical processing
Matthias Stegmaier, University of Münster, Germany
SESSION-2 PRAM-1
A review of recent phase change memory developments
Guy Wicker, Ovshinsky Innovation, USA
Phase-Change Materials – Performances and Applications from NOR Replacement to Storage Class Memory
Fabio Pellizzer, Micron, Italy
Multi-level storage in phase change memory devices
Abu Sebastian, IBM Research—Zurich, Switzerland
A Chalcogenide-based High Performance Selector
Rong Zhao, Singapore University of Technology & Design (SUTD), Singapore
Time- and space-dependent electric response of Ovonic devices
Carlo Jacoboni, Università di Modena, Italy
Multilayer phase-change film for multilevel storage
Yegang Lu, Ningbo University, China
SESSION-3 Theory & Modeling & Simulation
Design rule for interfacial phase change memory and its functionalities
Junji Tominaga, National Institute of Advanced Industrial Science and Technology (AIST), Japan
Atomistic simulations of thermal transport in phase change materials
Marco Bernasconi, University of Milan - Bicocca, Italy
Novel phase change materials by design: The mystery of resonance bonding
Matthias Wuttig, RWTH Aachen, Germany
Atomic Layering, Intermixing and Switching Mechanism in GeSbTe based Chalcogenide Superlattices
Xiaoming Yu, University of Cambridge, UK
Genetic algorithm inspired design of Ge2Sb2Te5 structures
Robert E Simpson, Singapore University of Technology and Design, Singapore
Crystalline GeSbTe: A topological Dirac semimetal?
Peter C. Schmitz, RWTH Aachen, Germany
SESSION-4 Structure & Analysis
Quantitative characterization of GeTe-Sb2Te3 superlattices and Ge2Sb2Te5 nanoparticles with narrow size distributions
Bart Kooi, Groningen University, The Netherlands
Local environment and optical response of nanoscaled GeTe-Sb2Te3 superlattices
Marco Malvestuto, ELETTRA, Italy
Initial dynamics immediately following femtosecond-laser irradiation in phase-change materials
Tetsu Ichitsubo, Kyoto University, Japan
Electrical characterization of phase change memory cells containing superlattices grown by molecular beam epitaxy
Jos E. Boschker, Paul-Drude-Institut für Festkörperelektronik, Germany
Formation and direct imaging of heterogeneous vacancy structures in cubic Ge2Sb2Te5 crystal lattices
Andriy Lotnyk, Leibniz Institute of Surface Modification IOM, Germany
SESSION-5 Materials
Phase-Change Materials: A Superlatticelike Architecturing, Incubation-Driven Programming Perspective
Chong Tow Chong, Singapore University of Technology and Design, Singapore
Impact of defect occupation on current-voltage characteristics in amorphous Ge2Sb2Te5
Martin Salinga, RWTH Aachen University, Germany
Metastable face-centered cubic Sb2Te3 phase for high-speed and low-energy phase transition
Feng Rao, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, China
Unravelling the quantum phase transition in Sb2Te3 topological insulator investigated using ultrafast time-resolved Kerr spectroscopy
Richarj Mondal, University of Tsukuba, Japan
Growth of GeTe/Bi2Te3 chalcogenide superlattice by sputtering
Yuta Saito, National Institute of Advanced Industrial Science and Technology (AIST), Japan
SESSION-6 PRAM-2 & Materials-2
The interplay between material and device properties in Ge-Te and Si-Te binary systems as a guide for material selection in selector applications
Alin Velea, IMEC, Kapeldreef 75, 3001, Leuven, Belgium
Quantum transport properties of Bi2Te3 topological insulator films grown by Metal-Organic Chemical Vapor Deposition (MOCVD)
Suyoun Lee, Korea Institute of Science and Technology, Korea
Bipolar switching operation in phase change memory devices for high temperature retention
Nicola Ciocchini, Politecnico di Milano (Italy)
A Clathrate-Based Phase-Change Material for Nanometer-Size, Energy-Efficient Internet-of-Things (IoT) Devices
Desmond Loke, Singapore University of Technology and Design, Singapore
SESSION-7 (New) Neuro & Others
Application of phase change materials on vision for brain inspired computing
Luping Shi, Tsinghua Univ., Beijing, China
Optical phase transition in nanometer-size GST clusters
Robert Morel, Univ. Grenoble, France
Combined Methods Study of Liquid Phase-Change Materials
Mathias Schumacher, RWTH Aachen, Germany
Investigation on In3SbTe2 phase change material for multi-bit data storage applications
Shivendra Kumar Pandey, Indian Institute of Technology, India
Mechanical and electrical characterization of CVD-grown graphene transferred on chalcogenide Ge2Sb2Te5 layers.
Giuseppe D’Arrigo, CNR-IMM, Italy
POSTER Session
An optoelectronic test station for novel phase-change device characterisation and development
Yat-Yin Au, University of Exeter, UK
Visible Light Scattering by Ge2Sb2Te5 Dots
Hsiang-Chu Wang, National Taiwan University,Taiwan
Optical response of GeSbTe/GeCuTe multi-layered thin film and its application to pulse skew measurement
Ryota Akimoto, Keio University, Japan
Functional optical memory based on the modification of light confinement in a microcavity with a phase change material
Yuya Kihara, Keio University, Japan
Tunable metasurface based on phase-change material
Cheng Hung Chu, Research Center for Applied Sciences, Academia Sinica, Taiwan.
Wideband visible absorbers by Ge2Sb2Te5 and Al nanogratings
Weiling Dong, Singapore University of Technology and Design
Observation of ultrafast magneto-optical response in interfacial phase change memory
Yuki Aihara, University of Tsukuba, Japan
Electrodeposition of Functional Metal Chalcogenide: GeSbTe Phase Change and Resistive Switching Memory
Ruomeng Huang, University of Southampton, UK
Size Scaling in Phase Change Memory Cells: From Traditional to Emerging Device Structures
Hasan Hayat, University of Exeter, UK
Modeling a three-terminal, phase-change based logic device
Al-Shahrablee Ammar Adel Hasan, University of Exeter, UK
Electrical Switching of GeTe-Sb2Te3 Superlattice iPCM under Bipolar Voltage Sweep
Noriyuki Miyata, National Institute of Advanced Industrial Science and Technology (AIST), Japan
The effect of the temperature dependence of viscosity on modelling crystallization dynamics in phase-change materials
Azzam S. Younus, University of Exeter, UK
Multiple valence alternation pairs lead to Ge-Ge chain with negative-U characteristics and gap states in a-GeTe
Huanglong Li, Tsinghua University, China
Unravelling the domain structures in GeTe and LaAlO3
Paul A. Vermeulen, University, Landoltweg, Germany
Nature of defects in amorphous GeSbTe phase change materials
Xiaoming Yu, University of Cambridge, UK
Computational Study of Liquid and Amorphous Sb
Ider Ronneberger, RWTH Aachen, Germany
First-principles study on superlattice Ge deficient GexTe/Sb2Te3
Hiroki Shirakawa, Nagoya University, Japan
Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe
Xue-Peng Wang, Jilin University, China
Quantitative characterization of GeTe-Sb2Te3 superlattices
Jamo Momand, University of Groningen, The Netherlands
Effect of substrate miscut on GST vacancy ordering
Eugenio Zallo, Paul-Drude-Institut für Festkörperelektronik, Germany
A study on the interface between an electrode and anamorphous chalcogenide: Effect of the contact on the characteristics of the Ovonic Threshold Switch (OTS)
Suyoun Lee, Korea Institute of Science and Technolog
Tuning of Mobility and Carrier Concentration in Crystalline Phase-Change Materials
Tobias Schafer, RWTH Aachen, Germany
XRD studies on optically recrystallized epitaxial GST films on Si(111)
Karthick Perumala, DESY, Germany
Laser switching of nanostructured phase change materials
Jitendra K. Behera, Singapore University of Technology and Design, Singapore
Stability of GeSb2Te4 crystalline phases under ion irradiation
Stefania Priviter, IMM-CNR, Italy
Power efficient crystal-amorphous switching in GeTe via defect engineering
Pavan Nukala, University of Pennsylvania, Philadelphia, U.S.A.
Computational Design of Amorphous Materials
David. A. Drabold, Ohio University & University of Southern Mississippi, USA
Crystallization of Ge2Sb2Te5 nanoparticles
Bin Chen, University of Groningen, The Netherlands
Resistance contrast of GeCu2Te3 phase change memory cell
Satoshi Shindo, Tohoku University, Japan
Magnetoresistance in [(GeTe)2/(Sb2Te3)1]n Superlattices
Do Bang, Toyota Technological Institute, Japan
The doping effect of V, Cr, Ni and Cu on the crystallization behavior of GeTe amorphous film
Shogo Hatayama, Tohoku University, Japan
Influence of bismuth modification on Ge2Sb2Te5 nanoscale films
Sanzha Dyussembayev, al-Farabi Kazakh National University, Kazakhstan
XRD and EXAFS structural investigations of sputtered GeTe/Sb2Te3 superlattices
Philippe Kowalczyk, CEA-Leti, 2 Université Grenoble, France
Understanding the amorphous structure of a prototype phase-change material
Ju-Young Cho, RWTH Aachen, Germany
Structural properties of chalcogenide superlattices and textured GeSbTe
Henning Hollermann, RWTH Aachen, Germany
A self-resetting spiking phase-change neuron
Rosie A Cobley, University of Exeter, UK
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