E\PCOS 2016


During the E\PCOS 2016 Symposium, 17 invited papers and 20 contributed papers from all over the world were presented. In the Poster Session, 18 posters were contributed..

Papers and Posters presented at E\PCOS 2016:

Ovshinsky Leactureship award 2016

HARP: A Highly Sensitive Pickup Tube Target Using Avalanche Multiplication in Amorphous Selenium 

  Kenkichi Tanioka, Medical Imaging Consortium, Japan

Doped Chalcogenide Glasses in Digital Direct Conversion Flat Panel X-Ray Imagers for Mammography: A Review

  Safa Kasap, Universisty of Saskatchewan, Canada

SESSION-1 New Applications & Optics

Reconfigurable nanophotonic devices using phase-change materials

  Wolfram H. P. Pernice, University of Münster, Germany

Femtosecond lattice and spin dynamics in topological phase-change materials

  Muneaki Hase, Tsukuba University, Japan

Ultrafast control of resonant bonding state in PCMs

  Simon Wall, CFO— Barcelona, Spain

Phase-change meta-photonics

  David Wright, University of Exeter, UK

Integrated phase-change photonics for all-optical processing

  Matthias Stegmaier, University of Münster, Germany



A review of recent phase change memory developments

  Guy Wicker, Ovshinsky Innovation, USA

Phase-Change Materials – Performances and Applications from NOR Replacement to Storage Class Memory

  Fabio Pellizzer, Micron, Italy

Multi-level storage in phase change memory devices

  Abu Sebastian, IBM Research—Zurich, Switzerland

A Chalcogenide-based High Performance Selector

  Rong Zhao, Singapore University of Technology & Design (SUTD), Singapore

Time- and space-dependent electric response of Ovonic devices

  Carlo Jacoboni, Università di Modena, Italy

Multilayer phase-change film for multilevel storage

  Yegang Lu, Ningbo University, China


SESSION-3 Theory & Modeling & Simulation

Design rule for interfacial phase change memory and its functionalities

  Junji Tominaga, National Institute of Advanced Industrial Science and Technology (AIST), Japan

Atomistic simulations of thermal transport in phase change materials

  Marco Bernasconi, University of Milan - Bicocca, Italy

Novel phase change materials by design: The mystery of resonance bonding

  Matthias Wuttig, RWTH Aachen, Germany

Atomic Layering, Intermixing and Switching Mechanism in GeSbTe based Chalcogenide Superlattices

  Xiaoming Yu, University of Cambridge, UK

Genetic algorithm inspired design of Ge2Sb2Te5 structures

  Robert E Simpson, Singapore University of Technology and Design, Singapore

Crystalline GeSbTe: A topological Dirac semimetal?

  Peter C. Schmitz, RWTH Aachen, Germany

SESSION-4 Structure & Analysis

Quantitative characterization of GeTe-Sb2Te3 superlattices and Ge2Sb2Te5 nanoparticles with narrow size distributions

  Bart Kooi, Groningen University, The Netherlands

Local environment and optical response of nanoscaled GeTe-Sb2Te3 superlattices

  Marco Malvestuto, ELETTRA, Italy

Initial dynamics immediately following femtosecond-laser irradiation in phase-change materials

  Tetsu Ichitsubo, Kyoto University, Japan

Electrical characterization of phase change memory cells containing superlattices grown by molecular beam epitaxy

  Jos E. Boschker, Paul-Drude-Institut für Festkörperelektronik, Germany

Formation and direct imaging of heterogeneous vacancy structures in cubic Ge2Sb2Te5 crystal lattices

  Andriy Lotnyk, Leibniz Institute of Surface Modification IOM, Germany

SESSION-5 Materials

Phase-Change Materials: A Superlatticelike Architecturing, Incubation-Driven Programming Perspective

  Chong Tow Chong, Singapore University of Technology and Design, Singapore

Impact of defect occupation on current-voltage characteristics in amorphous Ge2Sb2Te5

  Martin Salinga, RWTH Aachen University, Germany

Metastable face-centered cubic Sb2Te3 phase for high-speed and low-energy phase transition

  Feng Rao, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, China

Unravelling the quantum phase transition in Sb2Te3 topological insulator investigated using ultrafast time-resolved Kerr spectroscopy

  Richarj Mondal, University of Tsukuba, Japan

Growth of GeTe/Bi2Te3 chalcogenide superlattice by sputtering

  Yuta Saito, National Institute of Advanced Industrial Science and Technology (AIST), Japan

SESSION-6 PRAM-2 & Materials-2

The interplay between material and device properties in Ge-Te and Si-Te binary systems as a guide for material selection in selector applications

  Alin Velea, IMEC, Kapeldreef 75, 3001, Leuven, Belgium

Quantum transport properties of Bi2Te3 topological insulator films grown by Metal-Organic Chemical Vapor Deposition (MOCVD)

  Suyoun Lee, Korea Institute of Science and Technology, Korea

Bipolar switching operation in phase change memory devices for high temperature retention

  Nicola Ciocchini, Politecnico di Milano (Italy)

A Clathrate-Based Phase-Change Material for Nanometer-Size, Energy-Efficient Internet-of-Things (IoT) Devices

  Desmond Loke, Singapore University of Technology and Design, Singapore

SESSION-7 (New) Neuro & Others

Application of phase change materials on vision for brain inspired computing

  Luping Shi, Tsinghua Univ., Beijing, China

Optical phase transition in nanometer-size GST clusters

  Robert Morel, Univ. Grenoble, France

Combined Methods Study of Liquid Phase-Change Materials

  Mathias Schumacher, RWTH Aachen, Germany

Investigation on In3SbTe2 phase change material for multi-bit data storage applications

  Shivendra Kumar Pandey, Indian Institute of Technology, India

Mechanical and electrical characterization of CVD-grown graphene transferred on chalcogenide Ge2Sb2Te5 layers.

  Giuseppe D’Arrigo, CNR-IMM, Italy


POSTER Session

An optoelectronic test station for novel phase-change device characterisation and development

  Yat-Yin Au, University of Exeter, UK

Visible Light Scattering by Ge2Sb2Te5 Dots

  Hsiang-Chu Wang, National Taiwan University,Taiwan

Optical response of GeSbTe/GeCuTe multi-layered thin film and its application to pulse skew measurement

  Ryota Akimoto, Keio University, Japan

Functional optical memory based on the modification of light confinement in a microcavity with a phase change material

  Yuya Kihara, Keio University, Japan

Tunable metasurface based on phase-change material

  Cheng Hung Chu, Research Center for Applied Sciences, Academia Sinica, Taiwan.

Wideband visible absorbers by Ge2Sb2Te5 and Al nanogratings

  Weiling Dong, Singapore University of Technology and Design

Observation of ultrafast magneto-optical response in interfacial phase change memory

  Yuki Aihara, University of Tsukuba, Japan

Electrodeposition of Functional Metal Chalcogenide: GeSbTe Phase Change and Resistive Switching Memory

  Ruomeng Huang, University of Southampton, UK

Size Scaling in Phase Change Memory Cells: From Traditional to Emerging Device Structures

  Hasan Hayat, University of Exeter, UK

Modeling a three-terminal, phase-change based logic device

  Al-Shahrablee Ammar Adel Hasan, University of Exeter, UK

Electrical Switching of GeTe-Sb2Te3 Superlattice iPCM under Bipolar Voltage Sweep

  Noriyuki Miyata, National Institute of Advanced Industrial Science and Technology (AIST), Japan

The effect of the temperature dependence of viscosity on modelling crystallization dynamics in phase-change materials

  Azzam S. Younus, University of Exeter, UK

Multiple valence alternation pairs lead to Ge-Ge chain with negative-U characteristics and gap states in a-GeTe

  Huanglong Li, Tsinghua University, China

Unravelling the domain structures in GeTe and LaAlO3

  Paul A. Vermeulen, University, Landoltweg, Germany

Nature of defects in amorphous GeSbTe phase change materials

  Xiaoming Yu, University of Cambridge, UK

Computational Study of Liquid and Amorphous Sb

  Ider Ronneberger, RWTH Aachen, Germany

First-principles study on superlattice Ge deficient GexTe/Sb2Te3

  Hiroki Shirakawa, Nagoya University, Japan

Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe

  Xue-Peng Wang, Jilin University, China

Quantitative characterization of GeTe-Sb2Te3 superlattices

  Jamo Momand, University of Groningen, The Netherlands

Effect of substrate miscut on GST vacancy ordering

  Eugenio Zallo, Paul-Drude-Institut für Festkörperelektronik, Germany

A study on the interface between an electrode and anamorphous chalcogenide: Effect of the contact on the characteristics of the Ovonic Threshold Switch (OTS)

  Suyoun Lee, Korea Institute of Science and Technolog

Tuning of Mobility and Carrier Concentration in Crystalline Phase-Change Materials

  Tobias Schafer, RWTH Aachen, Germany

XRD studies on optically recrystallized epitaxial GST films on Si(111)

  Karthick Perumala, DESY, Germany

Laser switching of nanostructured phase change materials

  Jitendra K. Behera, Singapore University of Technology and Design, Singapore

Stability of GeSb2Te4 crystalline phases under ion irradiation

  Stefania Priviter, IMM-CNR, Italy

Power efficient crystal-amorphous switching in GeTe via defect engineering

  Pavan Nukala, University of Pennsylvania, Philadelphia, U.S.A.

Computational Design of Amorphous Materials

  David. A. Drabold, Ohio University & University of Southern Mississippi, USA

Crystallization of Ge2Sb2Te5 nanoparticles

  Bin Chen, University of Groningen, The Netherlands

Resistance contrast of GeCu2Te3 phase change memory cell

  Satoshi Shindo, Tohoku University, Japan

Magnetoresistance in [(GeTe)2/(Sb2Te3)1]n Superlattices

  Do Bang, Toyota Technological Institute, Japan

The doping effect of V, Cr, Ni and Cu on the crystallization behavior of GeTe amorphous film

  Shogo Hatayama, Tohoku University, Japan

Influence of bismuth modification on Ge2Sb2Te5 nanoscale films

  Sanzha Dyussembayev, al-Farabi Kazakh National University, Kazakhstan

XRD and EXAFS structural investigations of sputtered GeTe/Sb2Te3 superlattices

  Philippe Kowalczyk, CEA-Leti, 2 Université Grenoble, France

Understanding the amorphous structure of a prototype phase-change material

  Ju-Young Cho, RWTH Aachen, Germany

Structural properties of chalcogenide superlattices and textured GeSbTe

  Henning Hollermann, RWTH Aachen, Germany

A self-resetting spiking phase-change neuron

  Rosie A Cobley, University of Exeter, UK