E\PCOS 2015
During the E\PCOS 2015 Symposium, 17 invited papers and 20 contributed papers from all over the world were presented. In the Poster Session, 18 posters were contributed..
Papers and Posters presented at E\PCOS 2015:
Oral Papers
Invited papers:
Structural studies of chalcogenide materials for phase-change memory
Toshiyuki Matsunaga, Panasonic and Kyoto University, Japan
An optoelectronic framework enabled by low-dimensional phase change films
Harish Bhaskaran, University of Oxford , UK
Cell architecture optimization in phase change memory
Mattia Boniardi, Micron, Agrate Brianza, Italy
Robust Ti-centered octahedrons in advancing phase change properties of Ti-Sb-Te
Feng Rao, Shanghai Institute of Micro-system and Information Technology, China
Modulating crystallization kinetics of phase-change materials via excitation-scheme engineering
Tae-Hoon Lee, University of Cambridge, UK
Theory insight for the crystallization of the prototype phase-change material Ge2Sb2Te5
Jaakko Akola, Tampere University of Technology, Finland
Designing new phase change materials via disorder and stoichiometry
Matthias Wuttig, RWTH Aachen University, Germany
How supercooled liquid phase-change materials crystallize: Snapshots after femtosecond optical excitation
Peter Zalden, Stanford University, USA
Exploring the Chemical-Bonding Nature of Amorphous GeTe
Volker Deringer, RWTH Aachen University, Germany
Structural Relaxations and Resistance Drift in Amorphous GeTe from Atomistic Simulations
Marco Bernasconi, University of Milano-Bicocca, Italy
Atomic stacking and van der Waals bonding in GeSbTe Superlattices
Bart Kooi, University of Groningen, the Netherlands
Understanding interfacial bonding of 2D materials
Jos Boschker, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
Multifunctional magnetoelectrics of GeTe/Sb2Te3 Superlattices
Junji Tominaga, National Institute AIST, Tsukuba, Japan
Nanoscale Ge2Sb2Te5 Phase Change Memory by Electrodeposition
C.H. Kees De Groot, University of Southampton, UK
Crossbar arrays for Storage Class Memory and non-Von Neumann computing
Geoffrey W. Burr, IBM Research - Almaden, San Jose, USA
Novel applications of phase change materials: from memory to computing
Daniele Ielmini, Polytechnic University of Milan, Italy
Development of High Density PCRAM Cell using ALD GST with Novel Precursors
Hyung Keun Kim, SK Hynix, Korea
Contributed papers:
Thermo-optic effect of GeSbTe in on-chip photonic circuitries at telecommunication wavelengths
Matthias Stegmaier, Karlsruhe Institute of Technology, Germany
Thickness dependence of magneto-optical Kerr rotation of [(GeTe)2(Sb2Te3)1]n superlattices
Do Bang, Toyota Technological Institute, Nagoya, Japan
The relation between optical bandgap and activation energy during relaxation in amorphous phase change materials
Martin Rütten, IBM Research, Zürich, Switzerland
Photoconductive THz detection with GeTe/Sb2Te3 interfacial phase change material
Kotaro Makino, National Institute AIST, Tsukuba, Japan
Towards 3-D PCM crossbar memory: Access devices based on mixed-ionic-electronic-conduction
Pritish Narayanan, IBM Research - Almaden, San Jose, USA
Endurance performances of Ge-rich chalcogenide for embedded automotive applications
Massimo Borghi, STMicroelectronics, Agrate Brianza, Italy
Computer simulation of the effect of doping on the crystallization behaviour of Ge2Sb2Te5
Stephen R. Elliott, University of Cambridge, UK
Structural evolution during the resistance drift phenomenon in amorphous GeTe phase change materials thin films
Pierre Noé, Université Grenoble Alpes, CEA-LETI, MINATEC, France
Order-disorder transition induced by ion irradiation in Ge2Sb2Te5 and GeTe crystalline films
Stefania Privitera, IMM-CNR, Catania, Italy
Crystallization Mechanisms of Low Resistance States in Ge-rich GeSbTe Phase-Change Memories
Martin Coué, CEA-LETI, Grenoble , France
Growth onset study of GeTe ultra-thin- films
Raffaella Calarco, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
Modeling of the atomic switching in chalcogenide superlattices
Xiaoming Yu, University of Cambridge, UK
STEM characterization of GeSbTe grown on Si(111) by Molecular Beam Epitaxy
Antonio M. Mio, IMM-CNR, Catania, Italy
Strained interfacial phase-change memory based on GeTe/SbxTe1-x superlattices
Xilin Zhou, Singapore University of Technology and Design, Singapore
Relationship between crystal orientation and electrical properties of chalcogenide films
Yuta Saito, National Institute AIST, Tsukuba, Japan
Reversible switching of the amorphous-crystalline phases in SeTeAs alloys using ultrafast-DSC
Paul A. Vermeulen, University of Groningen, the Netherlands
Phase Change Memories Based on Special Alloys of GaSb and GaSbGe Materials
Huai-Yu Cheng, IBM/Macronix PCRAM Joint Project, Macronix International, Taiwan, ROC
Phase change behavior of molybdenum oxide film
Yukiko Ogawa, Tohoku University, Sendai, Japan
Reversing the resistivity contrast in phase-change materials using high pressure
Ming Xu, RWTH Aachen University, Germany
PCM for neuromorphic applications: Impact of device characteristics on neural network performance
Irem Boybat, IBM Research - Almaden, USA and EPFL, Lausanne, Switzerland
Poster Session
Crystallization behavior of Ge8Sb2-xBixTe11 thin films
Roman Svoboda, University of Pardubice, Czech Republic
Electronic excitation effects on the phase change of Ge2Sb2Te5 and bonding effects on the high data retention of Ge1Cu2Te3
Xian-Bin Li. Jilin University, Changchun, China
Feasibility study of multi-level PCRAM with multiple phase change layers
Yuji Sutou, Tohoku University, Sendai, Japan
Pulsed laser deposited GeTe phase-change films on Silicon
Xinxing Sun, Leibniz Institute of Surface Modification, Leipzig, German
Size-controlled preparation of Ge2Sb2Te5 nanoparticles by inert gas condensation
Bin Chen, University of Groningen, the Netherlands
Modeling of the current filament formation in PCM
Nikita Bogoslovskiy, Ioffe Physical-Technical Institute, St. Petersburg, Russia
Character of coherent optical phonons in GeSbTe/InAs(111)
Reem Al-Saigh, University of Exeter, UK
Localization properties of crystalline phase-change materials
Wei Zhang, Xi’an Jiaotong University, China
Van der Waals bonding in GeTe-Sb2Te3 superlattices
Jamo Momand, University of Groningen, the Netherlands
Contact resistivity of GeCu2Te3 phase change material on W electrode
Satoshi Shindo, Tohoku University, Sendai, Japan
A low temperature study on optical bandgap and vibrational modes of thin Ge1Sb4Te7 films
Smriti Sahu, Indian Institute of Technology Indore, India
Plasmonic resonance of Ge2Sb2Te5 nanoantenna toward tunable gradient metasurface
Cheng Hung Chu, Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan
A theoretical study of scaling behaviour of mushroom PCRAM devices using the Gillespie cellular automata approach
Hasan Hayat, University of Exeter, UK
Modelling the phase-change dynamic during ultrafast laser irradiation
Azzam S. Younus, University of Exeter, UK
Ab-initio Simulations of Liquid Phase-Change Materials
Mathias Schumacher, RWTH Aachen University, Germany
Revisiting the Local Structure in Chalcogenide Superlattices
Marco Malvestuto, Elettra-Sincrotrone Trieste S.C.p.A., Italy
High-resolution STEM investigation of textured and epitaxial Ge-Sb-Te thin films
Ulrich Roß, Leibniz Institute of Surface Modification IOM, Germany
Structural dynamics in fs laser-excited phase change materials studied by time-resolved X-ray scattering
Klaus Sokolowski-Tinten, University of Duisburg-Essen, Germany