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E\PCOS 2015


During the E\PCOS 2015 Symposium, 17 invited papers and 20 contributed papers from all over the world were presented. In the Poster Session, 18 posters were contributed..

Papers and Posters presented at E\PCOS 2015:

Oral Papers

Invited papers:


Structural studies of chalcogenide materials for phase-change memory

  Toshiyuki Matsunaga, Panasonic and Kyoto University, Japan


An optoelectronic framework enabled by low-dimensional phase change films

  Harish Bhaskaran, University of Oxford , UK


Cell architecture optimization in phase change memory

  Mattia Boniardi, Micron, Agrate Brianza, Italy


Robust Ti-centered octahedrons in advancing phase change properties of Ti-Sb-Te

  Feng Rao, Shanghai Institute of Micro-system and Information Technology, China


Modulating crystallization kinetics of phase-change materials via excitation-scheme engineering

  Tae-Hoon Lee, University of Cambridge, UK


Theory insight for the crystallization of the prototype phase-change material Ge2Sb2Te5

  Jaakko Akola, Tampere University of Technology, Finland


Designing new phase change materials via disorder and stoichiometry

  Matthias Wuttig, RWTH Aachen University, Germany


How supercooled liquid phase-change materials crystallize: Snapshots after femtosecond optical excitation

  Peter Zalden, Stanford University, USA


Exploring the Chemical-Bonding Nature of Amorphous GeTe

  Volker Deringer, RWTH Aachen University, Germany


Structural Relaxations and Resistance Drift in Amorphous GeTe from Atomistic Simulations

  Marco Bernasconi, University of Milano-Bicocca, Italy


Atomic stacking and van der Waals bonding in GeSbTe Superlattices

  Bart Kooi, University of Groningen, the Netherlands


Understanding interfacial bonding of 2D materials

  Jos Boschker, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany


Multifunctional magnetoelectrics of GeTe/Sb2Te3 Superlattices

  Junji Tominaga, National Institute AIST,  Tsukuba, Japan


Nanoscale Ge2Sb2Te5 Phase Change Memory by Electrodeposition

  C.H. Kees De Groot, University of Southampton, UK


Crossbar arrays for Storage Class Memory and non-Von Neumann computing

  Geoffrey W.  Burr, IBM Research - Almaden, San Jose, USA


Novel applications of phase change materials: from memory to computing

  Daniele Ielmini, Polytechnic University of Milan, Italy


Development of High Density PCRAM Cell using ALD GST with Novel Precursors

  Hyung Keun Kim, SK Hynix, Korea

Contributed papers:

Thermo-optic effect of GeSbTe in on-chip photonic circuitries at telecommunication wavelengths

  Matthias Stegmaier, Karlsruhe Institute of Technology, Germany

Thickness dependence of magneto-optical Kerr rotation of [(GeTe)2(Sb2Te3)1]n superlattices

  Do Bang, Toyota Technological Institute, Nagoya, Japan

The relation between optical bandgap and activation energy during relaxation in amorphous phase change materials

  Martin Rütten, IBM Research, Zürich, Switzerland

Photoconductive THz detection with GeTe/Sb2Te3 interfacial phase change material

  Kotaro Makino, National Institute AIST, Tsukuba, Japan

Towards 3-D PCM crossbar memory: Access devices based on mixed-ionic-electronic-conduction

  Pritish Narayanan, IBM Research - Almaden, San Jose, USA

Endurance performances of Ge-rich chalcogenide for embedded automotive applications

  Massimo Borghi, STMicroelectronics, Agrate Brianza, Italy

Computer simulation of the effect of doping on the crystallization behaviour of Ge2Sb2Te5                                  

  Stephen R. Elliott, University of Cambridge, UK

Structural evolution during the resistance drift phenomenon in amorphous GeTe phase change materials thin films

  Pierre Noé, Université Grenoble Alpes, CEA-LETI, MINATEC, France

Order-disorder transition induced by ion irradiation in Ge2Sb2Te5 and GeTe crystalline films

  Stefania Privitera, IMM-CNR, Catania, Italy

Crystallization Mechanisms of Low Resistance States in Ge-rich GeSbTe Phase-Change Memories

  Martin Coué, CEA-LETI, Grenoble , France

Growth onset study of GeTe ultra-thin- films

  Raffaella Calarco, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

Modeling of the atomic switching in chalcogenide superlattices

  Xiaoming Yu, University of Cambridge, UK

STEM characterization of GeSbTe grown on Si(111) by Molecular Beam Epitaxy

  Antonio M. Mio, IMM-CNR, Catania, Italy

Strained interfacial phase-change memory based on GeTe/SbxTe1-x superlattices

  Xilin Zhou, Singapore University of Technology and Design, Singapore

Relationship between crystal orientation and electrical properties of chalcogenide films

  Yuta Saito, National Institute AIST, Tsukuba, Japan

Reversible switching of the amorphous-crystalline phases in SeTeAs alloys using ultrafast-DSC

  Paul A. Vermeulen, University of Groningen, the Netherlands

Phase Change Memories Based on Special Alloys of GaSb and GaSbGe Materials

  Huai-Yu Cheng, IBM/Macronix PCRAM Joint Project, Macronix International, Taiwan, ROC

Phase change behavior of molybdenum oxide film

  Yukiko Ogawa, Tohoku University, Sendai, Japan

Reversing the resistivity contrast in phase-change materials using high pressure

  Ming Xu, RWTH Aachen University, Germany

PCM for neuromorphic applications: Impact of device characteristics on neural network performance

  Irem Boybat, IBM Research - Almaden,  USA and EPFL, Lausanne, Switzerland


Poster Session

Crystallization behavior of Ge8Sb2-xBixTe11 thin films

  Roman Svoboda, University of Pardubice, Czech Republic

Electronic excitation effects on the phase change of Ge2Sb2Te5 and bonding effects on the high data retention of Ge1Cu2Te3

  Xian-Bin Li. Jilin University, Changchun, China

Feasibility study of multi-level PCRAM with multiple phase change layers

  Yuji Sutou, Tohoku University, Sendai, Japan

Pulsed laser deposited GeTe phase-change films on Silicon

  Xinxing Sun, Leibniz Institute of Surface Modification,  Leipzig, German

Size-controlled preparation of Ge2Sb2Te5 nanoparticles by inert gas condensation

  Bin Chen, University of Groningen, the Netherlands

Modeling of the current filament formation in PCM

  Nikita Bogoslovskiy, Ioffe Physical-Technical Institute, St. Petersburg, Russia

Character of coherent optical phonons in GeSbTe/InAs(111)

  Reem Al-Saigh, University of Exeter, UK

Localization properties of crystalline phase-change materials

  Wei Zhang, Xi’an Jiaotong University, China

Van der Waals bonding in GeTe-Sb2Te3 superlattices

  Jamo Momand, University of Groningen, the Netherlands

Contact resistivity of GeCu2Te3 phase change material on W electrode

  Satoshi Shindo, Tohoku University, Sendai, Japan

A low temperature study on optical bandgap and vibrational modes of thin Ge1Sb4Te7 films

  Smriti Sahu, Indian Institute of Technology Indore, India

Plasmonic resonance of Ge2Sb2Te5 nanoantenna toward tunable gradient metasurface

  Cheng Hung Chu, Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan

A theoretical study of scaling behaviour of mushroom PCRAM devices using the Gillespie cellular automata approach

  Hasan Hayat, University of Exeter, UK

Modelling the phase-change dynamic during ultrafast laser irradiation

  Azzam S. Younus, University of Exeter, UK

Ab-initio Simulations of Liquid Phase-Change Materials

  Mathias Schumacher, RWTH Aachen University, Germany

Revisiting the Local Structure in Chalcogenide Superlattices

  Marco Malvestuto, Elettra-Sincrotrone Trieste S.C.p.A., Italy

High-resolution STEM investigation of textured and epitaxial Ge-Sb-Te thin films

  Ulrich Roß, Leibniz Institute of Surface Modification IOM, Germany


Structural dynamics in fs laser-excited phase change materials studied by time-resolved X-ray scattering

  Klaus Sokolowski-Tinten, University of Duisburg-Essen, Germany

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