E\PCOS 2014

 

During the E\PCOS 2014 Symposium, 14 invited papers and 15 contributed papers from all over the world were presented. In the Poster Session, 17  posters were contributed.

Papers and Posters presented at E\PCOS 2014:

Oral Papers

Invited Papers:

 

Brain-inspired memory based on plasmon particle network with phase change material

  Toshiharu Saiki, Keio University, Japan

SET Performance Improvement in Phase-Change Memory Based on Innovative Materials Featuring High Temperature Data Retention

  Gabriele Navarro, CEA, LETI, France

Magneto Optical Kerr Rotation of [(GeTe)2(Sb2Te3)1]n Superlattice

  Do Bang, Toyota Technological University, Japan 

 

Resistance stabilization effect of the metallic surfactant in a phase change memory cell and new requirement for phase change material for multi-level cell (MLC) performance improvement

  SangBum Kim, IBM, USA  

 

Topological-switching Random-Access Memory (TRAM)

  Norikatsu Takaura, LEAP, Japan

Electrical transport in chalcogenide materials: a cold case?

  Enrico Piccinini, Università di Bologna, Italy

Topological control of band structures in surfaces, interfaces and superlattices

  Shuichi Murakami,Tokyo Institute of Technology, Japan

Device numerical simulation as a bridge between material properties and PCM electrical performance

  Andrea Ghetti, Micron, Italy

Direct observation of picosecond lattice dynamics in Ge2Sb2Te5 by x-ray free- electron laser (SACLA)

  Eiichiro Matsubara, Kyoto University , Japan

Understanding the structural stability of amorphous phase GeSbTe through mechanical testing

  Young-Chang Joo, Seoul National University, Korea

Differences in crystallization of as-deposited and pressure re-amorphized Ge2Sb2Te5 under hydrostatic pressure

  Milos Krbal, University of Pardubice, Czech Republic

Ovonic Threshold Switching devices based on Ge-Se chalcogenides: Engineering of the threshold voltage

  Suyoun Lee, KIST, Korea

Up to 1E-4 Power Reduction in in Superlattice Phase Change Materials by Electric- Field-Induced Switching

  Toshimichi Shintani. Hitachi Central Research Laboratory, Japan

Fundamental properties and deposition behaviors of interfacial phase-change memory (iPCM) materials

  Yuta Saito, AIST, Japan

Contributed Papers:

High-performance Mach-Zehnder Interferometer Type Optical Switch Using N- doped GeTe Thin Films

  Yasuro Shimazaki, Keio University, Japan

Investigation of free carriers in epitaxial GeSbTe alloys upon crystallization by means of THz spectroscopy and transport measurements

  Valeria Bragaglia, Paul-Drude-Institut für Festkörperelektronik, Germany

Time dependent study of low-field IV characteristic and threshold switching in melt- quenched phase change line cells

  Marin Rütten, IBM Research, Zürich, Switzerland

Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte

  Charles Rebora, Aix Marseille University, France

 

Aging mechanisms in amorphous GeTe

  Jean Yves Raty, Université de Liège, Belgium

Subthreshold Conduction in Amorphous Phase-Change Materials

  Manuel Le Gallo, IBM Research – Zurich, Switzerland

Doping Studies of GST: Rational Design of New Materials

  Stephen R. Elliott, University of Cambridge, UK

Ultra-fast optically induced structural dynamics in Ge2Sb2Te5 probing by time- resolved x-ray diffraction using a free-electron laser

  Kirill Mitrofanov, AIST, Japan

Effects of grain boundaries on electronic transport in crystalline states of GeSbTe materials: NIR - THz - DC spectroscopies

  Koichi Shimakawa, University of Pardubice, Czech Republic

Control of the epitaxial registry between chalcogenide films and Si(111)

  Raffaela Calarco, Paul-Drude-Institut für Festkörperelektronik, Germany

Disorder-induced localization in the pseudo-binary alloys between Ge3Sb2Te6 and GeTe

  Peter Jost, RWTH Aachen University, Germany

An Extremely Low Power Threshold Switching of Thin Ge15Te85 Films using Conductive Atomic Force Microscopy (C-AFM)

  Manivannan Anbarasu, Indian Institute of Technology Indore, India

Electrodeposition of Phase Change Random Access Memory

  Ruomeng Huang, University of Southampton, UK

Fast crystallization in Si-doped GeTe amorphous film by surface oxidation

  Yuji Sutou, Tohoku University, Japan

Effect of Ge doping on GaSb phase transition

  Magali Putero, Aix marseille University, France

Poster Session

A new application of phase-change alloys

  Semyon D. Savransky, The TRIZ Experts, USA

Using Pressure to Tune the Resistivity in Phase Change Materials

  Ming Xu, RWTH Aachen University, Germany

Ab initio simulations of crystallization of Ge2Sb2Te5

  Riccardo Mazzarello, RWTH Aachen University, Germany

Disorder-related transport phenomena in GST-alloys at low temperatures

  Hanno Volker, RWTH Aachen University, Germany
 

Size misfit and elastic energy contribution to the phase transition of PCM clusters

  Robert Morel, CEA, INAC-SP2M, France
 

Instability in the transient electrical conduction of Ovonic systems

  Fabrizio Buscemi, Università di Modena e Reggio, Italy

Quantum transport of GeTe/Sb2Te3 superlattice

  Zhe Yang, Huazhong University of Science and Technology, China

Ab initio study of crystallization kinetics in AgInSbTe

  Wei Zhang, RWTH Aachen University, Germany

Ab initio study of crystallization kinetics in AgInSbTex

  Satoshi Shindo, Tohoku University, Japan

Structure of Ge-Sb-Te melts from First Principles Molecular Dynamics simulations and neutron scattering measurements

  Hugo M. Flores-Ruiz, Université Pierre et Marie Curie, France
 

Excited state effects during ultra-fast optically induced structural dynamics in Ge2Sb2Te5 by density functional theory

  Paul Fons, AIST, Japan

Transmission electron microscopy of Sb2Te3 thin films and GeTe/Sb2Te3 superlattices

  Jamo Momand, Zernike Institute for Advanced Materials, The Netherlands

Crystallization Properties of Sb-rich GeSbTe Alloys by in-situ Morphological and Electrical Analysis

  Giuseppe D.Arrigo, CNR IMM, VIII Strada, Italy
 

In-situ crystallization of stacked phase change memory bilayers

  Alin Velea, Paul Scherrer Institute, Switzerland

Crystallization process in Ga-Sb phase change materials: a simultaneous DSC and quick-EXAFS study

  M.-Vanessa Coulet, Aix-Mararseille university, France

Disorder-induced phonon softening and structural transitions in Ge-Sb-Te compoundsSeung-Hoon  

  Jhi, Pohang University of Science and Technology, Korea

Elaboration and characterization of co-evaporated GeSbTe amorphous films

  Gilles Silly, Université de Montpellier, France