E\PCOS 2014
During the E\PCOS 2014 Symposium, 14 invited papers and 15 contributed papers from all over the world were presented. In the Poster Session, 17 posters were contributed.
Papers and Posters presented at E\PCOS 2014:
Oral Papers
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Invited Papers:
Brain-inspired memory based on plasmon particle network with phase change material
Toshiharu Saiki, Keio University, Japan
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SET Performance Improvement in Phase-Change Memory Based on Innovative Materials Featuring High Temperature Data Retention
Gabriele Navarro, CEA, LETI, France
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Magneto Optical Kerr Rotation of [(GeTe)2(Sb2Te3)1]n Superlattice
Do Bang, Toyota Technological University, Japan
Resistance stabilization effect of the metallic surfactant in a phase change memory cell and new requirement for phase change material for multi-level cell (MLC) performance improvement
SangBum Kim, IBM, USA
Topological-switching Random-Access Memory (TRAM)
Norikatsu Takaura, LEAP, Japan
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Electrical transport in chalcogenide materials: a cold case?
Enrico Piccinini, Università di Bologna, Italy
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Topological control of band structures in surfaces, interfaces and superlattices
Shuichi Murakami,Tokyo Institute of Technology, Japan
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Device numerical simulation as a bridge between material properties and PCM electrical performance
Andrea Ghetti, Micron, Italy
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Direct observation of picosecond lattice dynamics in Ge2Sb2Te5 by x-ray free- electron laser (SACLA)
Eiichiro Matsubara, Kyoto University , Japan
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Understanding the structural stability of amorphous phase GeSbTe through mechanical testing
Young-Chang Joo, Seoul National University, Korea
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Differences in crystallization of as-deposited and pressure re-amorphized Ge2Sb2Te5 under hydrostatic pressure
Milos Krbal, University of Pardubice, Czech Republic
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Ovonic Threshold Switching devices based on Ge-Se chalcogenides: Engineering of the threshold voltage
Suyoun Lee, KIST, Korea
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Up to 1E-4 Power Reduction in in Superlattice Phase Change Materials by Electric- Field-Induced Switching
Toshimichi Shintani. Hitachi Central Research Laboratory, Japan
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Fundamental properties and deposition behaviors of interfacial phase-change memory (iPCM) materials
Yuta Saito, AIST, Japan
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Contributed Papers:
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High-performance Mach-Zehnder Interferometer Type Optical Switch Using N- doped GeTe Thin Films
Yasuro Shimazaki, Keio University, Japan
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Investigation of free carriers in epitaxial GeSbTe alloys upon crystallization by means of THz spectroscopy and transport measurements
Valeria Bragaglia, Paul-Drude-Institut für Festkörperelektronik, Germany
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Time dependent study of low-field IV characteristic and threshold switching in melt- quenched phase change line cells
Marin Rütten, IBM Research, Zürich, Switzerland
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Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte
Charles Rebora, Aix Marseille University, France
Aging mechanisms in amorphous GeTe
Jean Yves Raty, Université de Liège, Belgium
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Subthreshold Conduction in Amorphous Phase-Change Materials
Manuel Le Gallo, IBM Research – Zurich, Switzerland
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Doping Studies of GST: Rational Design of New Materials
Stephen R. Elliott, University of Cambridge, UK
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Ultra-fast optically induced structural dynamics in Ge2Sb2Te5 probing by time- resolved x-ray diffraction using a free-electron laser
Kirill Mitrofanov, AIST, Japan
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Effects of grain boundaries on electronic transport in crystalline states of GeSbTe materials: NIR - THz - DC spectroscopies
Koichi Shimakawa, University of Pardubice, Czech Republic
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Control of the epitaxial registry between chalcogenide films and Si(111)
Raffaela Calarco, Paul-Drude-Institut für Festkörperelektronik, Germany
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Disorder-induced localization in the pseudo-binary alloys between Ge3Sb2Te6 and GeTe
Peter Jost, RWTH Aachen University, Germany
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An Extremely Low Power Threshold Switching of Thin Ge15Te85 Films using Conductive Atomic Force Microscopy (C-AFM)
Manivannan Anbarasu, Indian Institute of Technology Indore, India
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Electrodeposition of Phase Change Random Access Memory
Ruomeng Huang, University of Southampton, UK
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Fast crystallization in Si-doped GeTe amorphous film by surface oxidation
Yuji Sutou, Tohoku University, Japan
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Effect of Ge doping on GaSb phase transition
Magali Putero, Aix marseille University, France
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Poster Session
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A new application of phase-change alloys
Semyon D. Savransky, The TRIZ Experts, USA
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Using Pressure to Tune the Resistivity in Phase Change Materials
Ming Xu, RWTH Aachen University, Germany
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Ab initio simulations of crystallization of Ge2Sb2Te5
Riccardo Mazzarello, RWTH Aachen University, Germany
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Disorder-related transport phenomena in GST-alloys at low temperatures
Hanno Volker, RWTH Aachen University, Germany
Size misfit and elastic energy contribution to the phase transition of PCM clusters
Robert Morel, CEA, INAC-SP2M, France
Instability in the transient electrical conduction of Ovonic systems
Fabrizio Buscemi, Università di Modena e Reggio, Italy
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Quantum transport of GeTe/Sb2Te3 superlattice
Zhe Yang, Huazhong University of Science and Technology, China
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Ab initio study of crystallization kinetics in AgInSbTe
Wei Zhang, RWTH Aachen University, Germany
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Ab initio study of crystallization kinetics in AgInSbTex
Satoshi Shindo, Tohoku University, Japan
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Structure of Ge-Sb-Te melts from First Principles Molecular Dynamics simulations and neutron scattering measurements
Hugo M. Flores-Ruiz, Université Pierre et Marie Curie, France
Excited state effects during ultra-fast optically induced structural dynamics in Ge2Sb2Te5 by density functional theory
Paul Fons, AIST, Japan
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Transmission electron microscopy of Sb2Te3 thin films and GeTe/Sb2Te3 superlattices
Jamo Momand, Zernike Institute for Advanced Materials, The Netherlands
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Crystallization Properties of Sb-rich GeSbTe Alloys by in-situ Morphological and Electrical Analysis
Giuseppe D.Arrigo, CNR IMM, VIII Strada, Italy
In-situ crystallization of stacked phase change memory bilayers
Alin Velea, Paul Scherrer Institute, Switzerland
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Crystallization process in Ga-Sb phase change materials: a simultaneous DSC and quick-EXAFS study
M.-Vanessa Coulet, Aix-Mararseille university, France
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Disorder-induced phonon softening and structural transitions in Ge-Sb-Te compoundsSeung-Hoon
Jhi, Pohang University of Science and Technology, Korea
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Elaboration and characterization of co-evaporated GeSbTe amorphous films
Gilles Silly, Université de Montpellier, France
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