E\PCOS

Oral Papers

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Invited Papers:

 

Brain-inspired memory based on plasmon particle network with phase change material

  Toshiharu Saiki, Keio University, Japan

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SET Performance Improvement in Phase-Change Memory Based on Innovative Materials Featuring High Temperature Data Retention

  Gabriele Navarro, CEA, LETI, France

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Magneto Optical Kerr Rotation of [(GeTe)2(Sb2Te3)1]n Superlattice

  Do Bang, Toyota Technological University, Japan 

 

Resistance stabilization effect of the metallic surfactant in a phase change memory cell and new requirement for phase change material for multi-level cell (MLC) performance improvement

  SangBum Kim, IBM, USA  

 

Topological-switching Random-Access Memory (TRAM)

  Norikatsu Takaura, LEAP, Japan

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Electrical transport in chalcogenide materials: a cold case?

  Enrico Piccinini, Università di Bologna, Italy

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Topological control of band structures in surfaces, interfaces and superlattices

  Shuichi Murakami,Tokyo Institute of Technology, Japan

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Device numerical simulation as a bridge between material properties and PCM electrical performance

  Andrea Ghetti, Micron, Italy

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Direct observation of picosecond lattice dynamics in Ge2Sb2Te5 by x-ray free- electron laser (SACLA)

  Eiichiro Matsubara, Kyoto University , Japan

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Understanding the structural stability of amorphous phase GeSbTe through mechanical testing

  Young-Chang Joo, Seoul National University, Korea

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Differences in crystallization of as-deposited and pressure re-amorphized Ge2Sb2Te5 under hydrostatic pressure

  Milos Krbal, University of Pardubice, Czech Republic

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Ovonic Threshold Switching devices based on Ge-Se chalcogenides: Engineering of the threshold voltage

  Suyoun Lee, KIST, Korea

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Up to 1E-4 Power Reduction in in Superlattice Phase Change Materials by Electric- Field-Induced Switching

  Toshimichi Shintani. Hitachi Central Research Laboratory, Japan

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Fundamental properties and deposition behaviors of interfacial phase-change memory (iPCM) materials

  Yuta Saito, AIST, Japan

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Contributed Papers:

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High-performance Mach-Zehnder Interferometer Type Optical Switch Using N- doped GeTe Thin Films

  Yasuro Shimazaki, Keio University, Japan

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Investigation of free carriers in epitaxial GeSbTe alloys upon crystallization by means of THz spectroscopy and transport measurements

  Valeria Bragaglia, Paul-Drude-Institut für Festkörperelektronik, Germany

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Time dependent study of low-field IV characteristic and threshold switching in melt- quenched phase change line cells

  Marin Rütten, IBM Research, Zürich, Switzerland

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Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte

  Charles Rebora, Aix Marseille University, France

 

Aging mechanisms in amorphous GeTe

  Jean Yves Raty, Université de Liège, Belgium

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Subthreshold Conduction in Amorphous Phase-Change Materials

  Manuel Le Gallo, IBM Research – Zurich, Switzerland

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Doping Studies of GST: Rational Design of New Materials

  Stephen R. Elliott, University of Cambridge, UK

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Ultra-fast optically induced structural dynamics in Ge2Sb2Te5 probing by time- resolved x-ray diffraction using a free-electron laser

  Kirill Mitrofanov, AIST, Japan

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Effects of grain boundaries on electronic transport in crystalline states of GeSbTe materials: NIR - THz - DC spectroscopies

  Koichi Shimakawa, University of Pardubice, Czech Republic

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Control of the epitaxial registry between chalcogenide films and Si(111)

  Raffaela Calarco, Paul-Drude-Institut für Festkörperelektronik, Germany

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Disorder-induced localization in the pseudo-binary alloys between Ge3Sb2Te6 and GeTe

  Peter Jost, RWTH Aachen University, Germany

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An Extremely Low Power Threshold Switching of Thin Ge15Te85 Films using Conductive Atomic Force Microscopy (C-AFM)

  Manivannan Anbarasu, Indian Institute of Technology Indore, India

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Electrodeposition of Phase Change Random Access Memory

  Ruomeng Huang, University of Southampton, UK

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Fast crystallization in Si-doped GeTe amorphous film by surface oxidation

  Yuji Sutou, Tohoku University, Japan

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Effect of Ge doping on GaSb phase transition

  Magali Putero, Aix marseille University, France

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Poster Session

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A new application of phase-change alloys

  Semyon D. Savransky, The TRIZ Experts, USA

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Using Pressure to Tune the Resistivity in Phase Change Materials

  Ming Xu, RWTH Aachen University, Germany

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Ab initio simulations of crystallization of Ge2Sb2Te5

  Riccardo Mazzarello, RWTH Aachen University, Germany

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Disorder-related transport phenomena in GST-alloys at low temperatures

  Hanno Volker, RWTH Aachen University, Germany
 

Size misfit and elastic energy contribution to the phase transition of PCM clusters

  Robert Morel, CEA, INAC-SP2M, France
 

Instability in the transient electrical conduction of Ovonic systems

  Fabrizio Buscemi, Università di Modena e Reggio, Italy

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Quantum transport of GeTe/Sb2Te3 superlattice

  Zhe Yang, Huazhong University of Science and Technology, China

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Ab initio study of crystallization kinetics in AgInSbTe

  Wei Zhang, RWTH Aachen University, Germany

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Ab initio study of crystallization kinetics in AgInSbTex

  Satoshi Shindo, Tohoku University, Japan

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Structure of Ge-Sb-Te melts from First Principles Molecular Dynamics simulations and neutron scattering measurements

  Hugo M. Flores-Ruiz, Université Pierre et Marie Curie, France
 

Excited state effects during ultra-fast optically induced structural dynamics in Ge2Sb2Te5 by density functional theory

  Paul Fons, AIST, Japan

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Transmission electron microscopy of Sb2Te3 thin films and GeTe/Sb2Te3 superlattices

  Jamo Momand, Zernike Institute for Advanced Materials, The Netherlands

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Crystallization Properties of Sb-rich GeSbTe Alloys by in-situ Morphological and Electrical Analysis

  Giuseppe D.Arrigo, CNR IMM, VIII Strada, Italy
 

In-situ crystallization of stacked phase change memory bilayers

  Alin Velea, Paul Scherrer Institute, Switzerland

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Crystallization process in Ga-Sb phase change materials: a simultaneous DSC and quick-EXAFS study

  M.-Vanessa Coulet, Aix-Mararseille university, France

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Disorder-induced phonon softening and structural transitions in Ge-Sb-Te compoundsSeung-Hoon  

  Jhi, Pohang University of Science and Technology, Korea

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Elaboration and characterization of co-evaporated GeSbTe amorphous films

  Gilles Silly, Université de Montpellier, France

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