E\PCOS 2013

 

During the E\PCOS 2013 Symposium, 24 papers from all over the world were presented. In the Poster Session, 26 contributed posters were contributed.

Papers and Posters presented at E\PCOS 2013:

Oral Papers

 

Stability of Amorphous Chalcogenide Materials: Phase Transition and Fragility
  Ju-Young Cho, Department of Materials Science & Engineering, Seoul National University, Seoul, Korea

Ti Impact in C-doped Phase-Change Memories compliant to Pb-free soldering reflow
  S. Souiki, CEA-LETI Minatec, Grenoble, France

Atomic structures and topological insulating property of metastable Ge-Sb-Te compounds
  Seung-Hoon Jhi, Pohang University of Science and Technology (POSTECH), Pohang, Korea

Spin-storage mechanism in interfacial phase-change memory (iPCM)
  S. Murakami, Department of Physics, Tokyo Institute of Technology,Tokyo, Japan

The puzzle of a comprehensive picture of drift phenomenon in chalchogenide alloys
  Paolo Fantini, Micron, Agrate Brianza, Italy,

Structure and bonding in phase-change alloys
  A.V. Kolobov, Nanoelectronics Research Institute & Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Techology Tsukuba, JAPAN

Atomic mobility and fast crystallization of the phase change compound GeTe
  M. Bernasconi, Lehrstuhl für Theoretische Chemie, Ruhr-Universität Bochum, Bochum, Germany

Crystallization phenomena in phase change memories: non-Arrhenius kinetics, modeling and novel applications
  N. Ciocchini, Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano, Italy

The Impact of Disorder on Transport in crystalline Phase Change Materials
  Matthias Wuttig, I. Physikalisches Institut (IA), RWTH Aachen University, Aachen, Germany

The Crystallization Behavior of Ge-Sb-Te Materials as a Function of Composition for Phase-Change Memory
  Huai-Yu Cheng, IBM/Macronix PCRAM Joint Project, Hsinchu, Taiwan, ROC

Measurement of Crystal Growth Velocity in Melt-Quenched AgInSbTe – Viscosity and Glass Formation in Phase Change Materials
  Martin Salinga, I. Physikalisches Institut (IA) and JARA-FIT, RWTH Aachen University, Aachen, Germany

Epitaxial GeSbTe grown on Si(111)
  K. Perumal, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

Crystallization properties of Ga-Sb phase change alloys
  Simone Raoux, IBM T. J. Watson Research Center, NY, USA

Size effects in the phase change properties of sub-10 nm PCM clusters
  R. Morel, INAC/SP2M et Université Joseph Fourier, CEA Grenoble, Grenoble, France

Scaling Technology and Reliability Aspects of a PRAM Cell for Storage Class Memory
  D.H. Ahn, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung-City, Korea

The investigation on the gap fill of ALD GST film and new phase change material for 20nm level PCRAM development
  Deoksin Kil, SK Hynix Inc.,Icheon-si Gyonggi-do, Korea,

Towards Storage Class Memory: access devices using Mixed Ionic Electronic Conduction (MIEC) and modeling of polycrystalline nucleation and growth
  Geoffrey W. Burr, IBM Almaden Research Center, San Jose, CA, USA

Tunable nanophotonic circuits based on phase-change materials
  Carlos Rios, Karlsruhe Institut für Technologie, Karlsuhe, Germany

Novel Applications Possibilities for Phase-Change Materials and Devices
  C. David Wright, College of Engineering, Mathematics & Physical Sciences, University of Exeter, Exeter, UK

Emulation of spike-timing dependent plasticity in phasechange memory cells for neuromorphic applications
  Dae-Hwan Kang, Memory Div., Semi. Biz., SEC, Hwasung-si, Gyeonggi-do, Korea

Phase Change Memory for Neuromorphic Systems and Applications
  M. Suri, CEA-LETI-Grenoble, France

Electrical Wind Force-Driven and Dislocation-Templated Amorphization in Phase-Change Materials
  Sung-Wook Nam, Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA

Sub-10 nm Scaling of Phase-Change Memory: Thermoelectric Physics, Carbon Nanotube and Graphene Electrodes
  E. Pop, Stanford Univ., Stanford, CA, USA

 

 

Poster Session

Contributed Posters:

New Materials for Low-Power PCM for Storage Device Applications
  N. Takaura, Low-power Electronics Association & Project (LEAP), Tsukuba, Ibaraki, Japan

Process Integration of Superlattice PCM to be Embedded in BEOL
  Takasumi Ohyanagi,Low-power Electronics Association & Project (LEAP), Tsukuba, Ibaraki, Japan

Study of SiTe/Sb2Te3 phase change superlattices
  Yuta Saito, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST), Higashi, Tsukuba, Japan

Electric and Optical Studies on Non-thermal Recording Mechanism of GeTe/Sb2Te3 Superlattice Phase Change Material
  Toshimichi Shintani, Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan

A theoretical approach to modeling the amorphous phase of GeTe for PCM
  F. Zipoli, IBM Zurich Research Laboratory, Rueschlikon, Switzerland

Effects of the amorphous structure on the electrical conductivity and the crystallization kinetics of GeTe thin films
  S. Privitera, Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), Catania, Italy

Self-organization of a fringe pattern between amorphous and crystalline phases in GeTe induced by femtosecond laser pulse amorphization
  Yosuke Katsumata, Keio University, Yokohama, Kanagawa, Japan

Effects of SiO2 inclusions in GeTe based alloys for PCM applications
  G. Navarro, CEA, LETI, MINATEC Campus, Grenoble, France

Resistance drift in phase change memory devices on a microsecond time scale
  M.Wimmer, 1st Institute of Physics (IA), RWTH Aachen University, Aachen, Germany

Direct Observation of Structural Changes Leading to RESET state drift in Ge2Sb2Te5
  Paul Fons, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan

Hall mobility in amorphous phase change materials
  M.Kaes, 1st Institute of Physics (IA), RWTH Aachen University, Aachen, Germany

From disorder towards tailored transport properties
  Felix R. L. Lange, 1st Institute of Physics (IA), RWTH Aachen University, Aachen, Germany

Changes in Electrical Transport of Amorphous Phase Change Materials Upon Annealing
  D. Krebs, IBM Zurich Research Laboratory, Rueschlikon, Switzerland

3D-nHD: transport in a 3D network using the HydroDynamic model
  Andrea Cappelli, Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Italy

Gradual change of resistance on high current density induced by nano-scaled voids in the crystalline phase of Ge2Sb2Te5
  Yong-Jin Park, Department of Materials Science and Engineering, Seoul National University, Seoul, Korea

Study of GeTe and Sb2Te3-GeTe alloys by time resolved XANES
  R.-N. Wang, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

Probing Ultrafast Optically-Induced Structural Changes in Ge2Sb2Te5 using a Free Electron Laser
  Kirill Mitrofanov, National Institute of Advanced Industrial Science and Technology Tsukuba, Ibaraki, Japan

Improved Nanometer Resolution XANES Imaging of Individual PCRAM Devices
  Jan H. Richter, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Higashi, Tsukuba, Ibaraki, Japan

Structural change upon annealing of amorphous GeSbTe on Si(111)
  V. Bragaglia, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

The crystallization behavior of GaSb alloy studied by combined in situ x-ray scattering and electrical measurements
  Magali Putero, Aix-Marseille Université, CNRS, IM2NP UMR 7334, Marseille, France

Coexistence of charge trapping and silver filaments in AgInSbTe memristor
  X. S. Miao, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China

Crystallization behavior of Ge17Sb23Se60 thin films
  Jaroslav Barták, Department of Physical Chemistry and Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Pardubice, Czech Republic

Early first principles study of phase-change material: Liquid and amorphous
  Assil Bouzid, Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, Strasbourg Cedex 2, France

Crystallisation of phase-change Ga-Sb materials – an ab initio molecular-dynamics study
  J Dixon, S R Elliott, University of Cambridge, Department of Chemistry, Cambridge, UK

Ge-rich PCM cell endurance study versus programming pulse shape
  Elisabetta Palumbo, STMicroelectronics, Agrate Brianza (MB), Italy

Compact Electro-Thermal Model for Thermal Cross-talk Analysis in PCM Arrays
  Aravinthan Athmanathan, IBM Zurich Research Laboratory, Rueschlikon, Switzerland

Selective Deposition of Phase Change Materials by Chemical Vapor Deposition and Electrodeposition
  Ruomeng Huang, University of Southampton, Southampton, UK

Determination of Short- and Intermediate Range Atomic Structures in Amorphous GST-Materials via Anomalous X-ray Scattering
  J. R. Stellhorn, Physikalische Chemie, Philipps-Universität Marburg, Marburg, Germany