E\PCOS 2012

 

During the E\PCOS 2012 Symposium, 18 papers from all over the world were presented. The Poster Sessions were divided in 2 parts: One part with 5 invited posters, and the other part with 19 contributed posters.

Papers and Posters presented at E\PCOS 2012:

Invited Papers

 

Along with GeSbTe - Finding the alloy and applying it to optical disks
  Noboru Yamada, Advanced Technology Research Laboratories, Kyoto, Japan

Crystallization of amorphous Ge2Sb2Te5: Order from disorder

  R.O. Jones, Forschungszentrum Jülich, Germany

Role of Te lone-pair electrons in structure and properties of layered GeTe-Sb2Te3 phase-change memory materials
  A.V. Kolobov, National Institute for Advanced Industrial Science and Technology, Japan

Unusual Magnetic Properties in Interfacial Phase-change Memory
  Junji Tominaga, National Institute for Advanced Industrial Science and Technology, Japan

Phase change materials strategies for reset current reduction
  V. Sousa, CEA-Leti, MINATEC Campus, Grenoble, France

Desorption kinetics of GeTe deposited on Si(111)
  Raffaella Calarco, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

Atomic Layer Deposition of phase change materials
  Mikko Ritala, University of Helsinki, Finland

Crystallization behaviors and structural study of amorphous GeCu2Te3
  Y. Sutou, Tohoku University, Sendai, Japan

Optical anisotropy in amorphous GeSbTe thin films induced by nonthermal phase change with femtosecond pulse excitation
  T. Saiki, Keio University, Kanagawa, Japan

Comparison of data retention measured by static laser testing and in PCRAM devices
  Simone Raoux, IBM T. J. Watson Research Center, New York, USA

Key Metrics and Reliability Prospects for High Performance PRAM
  D.H. Ahn, Semiconductor R&D Center, Samsung Electronics Co., Ltd, Korea

New metrics for chalcogenide material optimization in PCMs
  Andrea Redaelli, Micron Semiconductor Italia, Agrate Brianza, Italy

Physics of electrical conduction in the sub-threshold regime and crystallization due to thermal disturbances in phase-change memory
  Chiyui Ahn, Stanford University, Stanford CA, USA

The roles of the Ge-Te core network and the Sb-Te pseudo network during rapid nucleation-dominated crystallization of amorphous Ge2Sb2Te5 revealed by anomalous x-ray scattering technique
  S. Kohara, JASRI/ SPring-8, Hyogo, Japan

Structural Review of Phase-change Recording Materials for Practical Use
  Toshiyuki Matsunaga, Material and Process Development Center Panasonic, Japan

The evolution of atomic order in crystalline phase-change materials
  M. Wuttig, Physikalisches Institut (IA), RWTH Aachen University, Aachen, Germany

 

 

Poster Session

 

Invited Posters:

Large scale molecular dynamics simulation of the crystallization of GeTe at the crystal-amorphous interface
  Giacomo Miceli, Department of Materials Science, University of Milano-Bicocca, Milano, Italy

Computer-aided deposition of GaxSb1-x thin films
  J. Kalikka, Nanoscience Center, Department of Physics, Jyväskylä, Finland

Engineering of Programming Operation for Increased Performances in Non Volatile Phase Change Memory
  Massimo Borghi, STMicroelectronics, Agrate Brianza, Italy

Effect of Dopant Incorporation in Phase Change Material
  P. Noé, CEA-Leti, Minatec, Grenoble, France

Study of nano-sized clusters of phase change materials
  G. E. Ghezzi, CEA-Leti, Minatec, Grenoble, France

Contributed Posters:

Coherent phonon modes of Polycrystalline and Amorphous GST thin films: a fingerprint of structure and bonding
  A Shalini, University of Exeter, Exeter, Devon, United Kingdom

Observation of T2z Optical Phonons and optically induced linear birefringence in epitaxial GeSbTe/GaSb films
  A Shalini,University of Exeter, Exeter, Devon, United Kingdom

Chalcogenide metamaterial phase change all optical switch of nanoscale thickness
  B. Gholipour, University of Southampton, Southampton, United Kingdom

Electronic-thermal switching in amorphous chalcogenides
  Nikita Bogoslovskiy, Russian Academy of Sciences, St. Petersburg, Russia

Fabrication and Characterization of Chalcogenide-based Non Volatile Memory Devices on Flexible Substrate
  T. Ouled-Khachroum, Aix-Marseille Université, Marseille, France

Crystallization in Se-Te thin films
  Jiri Malek, University of Pardubice, Czech Republic

Compositional dependence on phase change characteristics in Ge-Cu-Te ternary phase change materials
  Yuta Saito, Tohoku University, Sendai, Japan

Low-Power Switching in Phase Change Memory using SnTe/Sb2Te3 Superlattice Film
  Susumu Soeya, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan

Study on Structure of GeTe Layer in GeTe/Sb2Te3 Superlattice Film
  Susumu Soeya, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan

Tersoff-based potential for amorphous GeTe
  F. Zipoli, IBM Research - Zurich, Rüschlikon, Switzerland

Structural properties of epitaxial Ge2Sb2Te5 films related to optical switching
  F. Gericke, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

Nanometer Resolution XANES Imaging of Individual PC-RAM Devices
  Jan H. Richter, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan

MOCVD self-assembly and characterization of Sb2Te3 and Ge-doped Sb-Te Nanowires
  M. Longoa, IMM-CNR, Agrate Brianza, Italy

Over-programming induced effects in the amorphous state of Phase Change Memories
  A. Calderoni, Micron, R&D – Technology development, Agrate Brianza, Italy

Phase transition on conductivity in chalcogenide glassy semiconductors in a high electric field
  Konstantin D. Tsendin, Russian Academy of Sciences, St. Petersburg, Russia

Crystallization of primed amorphous Ge2Sb2Te5 studied by Transmission Electron Microscopy
  E. Carria, Università di Catania, Catania, Italy

Growth and characterization of In-Sb-Te thin films
  Roberto Fallica, IMM-CNR, Agrate Brianza, Italy

Study on crystal structure of Cu-Sb2Te film for phase-change memory application
  Yegang Lu, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, China

Phase-change computing
  C. David Wright, University of Exeter, Exeter, UK