E\PCOS 2012
During the E\PCOS 2012 Symposium, 18 papers from all over the world were presented. The Poster Sessions were divided in 2 parts: One part with 5 invited posters, and the other part with 19 contributed posters.
Papers and Posters presented at E\PCOS 2012:
Invited Papers
Along with GeSbTe - Finding the alloy and applying it to optical disks
Noboru Yamada, Advanced Technology Research Laboratories, Kyoto, Japan
Crystallization of amorphous Ge2Sb2Te5: Order from disorder
R.O. Jones, Forschungszentrum Jülich, Germany
Role of Te lone-pair electrons in structure and properties of layered GeTe-Sb2Te3 phase-change memory materials
A.V. Kolobov, National Institute for Advanced Industrial Science and Technology, Japan
Unusual Magnetic Properties in Interfacial Phase-change Memory
Junji Tominaga, National Institute for Advanced Industrial Science and Technology, Japan
Phase change materials strategies for reset current reduction
V. Sousa, CEA-Leti, MINATEC Campus, Grenoble, France
Desorption kinetics of GeTe deposited on Si(111)
Raffaella Calarco, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
Atomic Layer Deposition of phase change materials
Mikko Ritala, University of Helsinki, Finland
Crystallization behaviors and structural study of amorphous GeCu2Te3
Y. Sutou, Tohoku University, Sendai, Japan
Optical anisotropy in amorphous GeSbTe thin films induced by nonthermal phase change with femtosecond pulse excitation
T. Saiki, Keio University, Kanagawa, Japan
Comparison of data retention measured by static laser testing and in PCRAM devices
Simone Raoux, IBM T. J. Watson Research Center, New York, USA
Key Metrics and Reliability Prospects for High Performance PRAM
D.H. Ahn, Semiconductor R&D Center, Samsung Electronics Co., Ltd, Korea
New metrics for chalcogenide material optimization in PCMs
Andrea Redaelli, Micron Semiconductor Italia, Agrate Brianza, Italy
Physics of electrical conduction in the sub-threshold regime and crystallization due to thermal disturbances in phase-change memory
Chiyui Ahn, Stanford University, Stanford CA, USA
The roles of the Ge-Te core network and the Sb-Te pseudo network during rapid nucleation-dominated crystallization of amorphous Ge2Sb2Te5 revealed by anomalous x-ray scattering technique
S. Kohara, JASRI/ SPring-8, Hyogo, Japan
Structural Review of Phase-change Recording Materials for Practical Use
Toshiyuki Matsunaga, Material and Process Development Center Panasonic, Japan
The evolution of atomic order in crystalline phase-change materials
M. Wuttig, Physikalisches Institut (IA), RWTH Aachen University, Aachen, Germany
Poster Session
Invited Posters:
Large scale molecular dynamics simulation of the crystallization of GeTe at the crystal-amorphous interface
Giacomo Miceli, Department of Materials Science, University of Milano-Bicocca, Milano, Italy
Computer-aided deposition of GaxSb1-x thin films
J. Kalikka, Nanoscience Center, Department of Physics, Jyväskylä, Finland
Engineering of Programming Operation for Increased Performances in Non Volatile Phase Change Memory
Massimo Borghi, STMicroelectronics, Agrate Brianza, Italy
Effect of Dopant Incorporation in Phase Change Material
P. Noé, CEA-Leti, Minatec, Grenoble, France
Study of nano-sized clusters of phase change materials
G. E. Ghezzi, CEA-Leti, Minatec, Grenoble, France
Contributed Posters:
Coherent phonon modes of Polycrystalline and Amorphous GST thin films: a fingerprint of structure and bonding
A Shalini, University of Exeter, Exeter, Devon, United Kingdom
Observation of T2z Optical Phonons and optically induced linear birefringence in epitaxial GeSbTe/GaSb films
A Shalini,University of Exeter, Exeter, Devon, United Kingdom
Chalcogenide metamaterial phase change all optical switch of nanoscale thickness
B. Gholipour, University of Southampton, Southampton, United Kingdom
Electronic-thermal switching in amorphous chalcogenides
Nikita Bogoslovskiy, Russian Academy of Sciences, St. Petersburg, Russia
Fabrication and Characterization of Chalcogenide-based Non Volatile Memory Devices on Flexible Substrate
T. Ouled-Khachroum, Aix-Marseille Université, Marseille, France
Crystallization in Se-Te thin films
Jiri Malek, University of Pardubice, Czech Republic
Compositional dependence on phase change characteristics in Ge-Cu-Te ternary phase change materials
Yuta Saito, Tohoku University, Sendai, Japan
Low-Power Switching in Phase Change Memory using SnTe/Sb2Te3 Superlattice Film
Susumu Soeya, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
Study on Structure of GeTe Layer in GeTe/Sb2Te3 Superlattice Film
Susumu Soeya, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
Tersoff-based potential for amorphous GeTe
F. Zipoli, IBM Research - Zurich, Rüschlikon, Switzerland
Structural properties of epitaxial Ge2Sb2Te5 films related to optical switching
F. Gericke, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
Nanometer Resolution XANES Imaging of Individual PC-RAM Devices
Jan H. Richter, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
MOCVD self-assembly and characterization of Sb2Te3 and Ge-doped Sb-Te Nanowires
M. Longoa, IMM-CNR, Agrate Brianza, Italy
Over-programming induced effects in the amorphous state of Phase Change Memories
A. Calderoni, Micron, R&D – Technology development, Agrate Brianza, Italy
Phase transition on conductivity in chalcogenide glassy semiconductors in a high electric field
Konstantin D. Tsendin, Russian Academy of Sciences, St. Petersburg, Russia
Crystallization of primed amorphous Ge2Sb2Te5 studied by Transmission Electron Microscopy
E. Carria, Università di Catania, Catania, Italy
Growth and characterization of In-Sb-Te thin films
Roberto Fallica, IMM-CNR, Agrate Brianza, Italy
Study on crystal structure of Cu-Sb2Te film for phase-change memory application
Yegang Lu, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, China
Phase-change computing
C. David Wright, University of Exeter, Exeter, UK