E\PCOS 2011
During the E\PCOS 2011 Symposium, 30 papers from all over the world were presented. The Poster Sessions were divided in 2 parts: One part with 11 invited posters, and the other part with 14 contributed posters.
Papers and Posters presented at E\PCOS 2011:
Invited Papers
The Basis for Electronic Mechanisms in Ovonic Phase Change Memories
Stanford R. Ovshinsky, Ovshinsky Innovation LLC, USA
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Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical perspective
Jaakko Akola, Tampere University of Technology, Finland
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Large scale molecular dynamics simulations of phase change materials
Marco Bernasconi, University of Milano-Bicocca, Italy
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Local Structure, X-ray Absorption and Localization Properties of GST and GeTe-based Phase Change Materials : an Ab Initio Simulation Approach.
Jean-Yves Raty, University of Liege, Belgium
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Disorder induced Localization in crystalline Phase Change Materials
Matthias Wuttig, RWTH Aachen University of Technology, Germany
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Topological insulating state in interfacial phase-change memory
Junji Tominaga, National Institute of Advanced Industrial Science and Technology, Japan
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Structure of the amorphous phase and the amorphisation mechanism in Ge-Sb-Te alloys
Alexander Kolobov, National Institute of Advanced Industrial Science and Technology, Japan
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Ordering in Crystalline Ge-rich Ge-Sb-Te Alloys: A story of different length scales
Paul Fons, National Institute of Advanced Industrial Science and Technology, Japan
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Hard X-ray Photoelectron Spectroscopy of Crystalline and Amorphous Ge1Cu2Te3
Keisuke Kobayashi, HiSOR, Hiroshima University, and NIMS Beamline Station at Spring-8, Japan
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Cycling of line-cell phase-change random access memory: Evolution of properties
Bart Kooi, University of Groningen, The Netherlands
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Phase change characteristics of Ge1Cu2Te3 films
Yuji Sutou, Tohoku University, Japan
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Thermally Stable, Low Current Consuming Gallium and Germanium Chalcogenides for Consumer and Automotive Memory Applications
Dan Hewak, University of Southampton, UK
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Phase-change control of ferromagnetism in GeTe-based phase change magnetic films
Xiang Shui Miao, Huazhong University of Science and Technology, China
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Understanding on Current-induced Crystallization Process and Faster Set Write Operation Thereof in Non-Volatile Phase Change Memory
Dae-Hwan Kang, Samsung, Korea
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Influence of Dopants on the Crystallization Temperature, Crystal Structure, Resistance, and Threshold Field for Ge2Sb2Te5 and GeTe Phase Change Materials
Simone Raoux, IBM T. J. Watson Research Center, USA
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Local electrical characterization of laser-recorded marks in Ge2Sb2Te5 thin films using conductive-tip atomic force microscopy
Masud Mansuripur, University of Arizona, Tucson, USA
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Two contrastive rapid recrystallization mechanisms revealed in practically used phase-change recording materials
Toshiyuki Matsunaga, Panasonic, Japan
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GeTe-based Phase Change Memories: Effect of stoechiometric variations and N or C addition
Veronique Sousa, CEA-LETI, France
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The Crystallization Behavior of Ga-Sb Materials as a Function of Composition for Phase Change Random Access Memory
Huai-Yu Cheng, Macronix, Taiwan
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Properties of Low-Power Phase-Change Device with GeTe/Sb2Te3 Superlattice Material
Toshimichi Shintani, National Institute of Advanced Industrial Science and Technology, Japan
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Material Selection through Band-alignment Study for PCRAM Integration with GeTe/Sb2Te3 Superlattice Material
Rong Zhao, Data Storage Institute, Singapore
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Phase-Change Memory with Carbon Nanotube Electrodesl
Eric Pop, University of Illinois at Urbana-Champaign, USA
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In-situ TEM observation of Electrical Wind Force Assisted Amorphization in Ge2Sb2Te5 Phase Change Nanowires
Ritesh Agarwal, University of Pennsylvania, USA
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Methodologies to Study the Scalability and Physics of Phase Change Memory devices
Rakesh Jeyasingh, Stanford University, USA
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Giant Surface Plasmon Resonance Switching of Gold Nanoparticles Based on Ultrafast Phase Change of GeSbTe
Toshiyuki Saiki, Keio University, Japan
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Status and Perspective of Chalcogenide PCM in the Semiconductor Industry
Roberto Bez, Micron, Italy
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Size-dependent random-telegraph noise in phase-change memories
Daniele Ielmini, Politecnico di Milano, Italy
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Enabling Technologies for Multilevel Phase-Change Memory
Haris Pozidis, IBM Research Zurich, Switzerland
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Subsystem and System-level Implications of PCM
Robert Haas, IBM Research Zurich, Switzerland
Poster Session
Invited Posters:
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Driving forces of mass transport in phase change materials and their effect on device failures
Tae-Youl Yang, Seoul National University, Korea
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Selective Excitation of Ge-Te Bond by Linearly-Polarized Femtosecond Pulse in GeTe/Sb2Te3 Superlattice
Kataro Makino, University of Tsukuba, Japan
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A 7-bit Readout Circuit in 90 nm CMOS for Drift-Resilient Multi-Level Phase-Change Memory
Aravinthan Athmanathan, IBM Research Zurich, Switzerland
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Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition
Luca Perniola, CEA-LETI, France
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Stacked Chalcogenide Layers for Phase Change Memory
Santosh Kurinec, Rochester Institute of Technology, USA
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Effect of doping on global and local order in crystalline GeTe
Berangere Hyot, CEA-LETI, France
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Characteristics of SbTe and GeTe based Phase Change Materials in Various Confined Cell Structure
Dong-Ho Ahn, Samsung, Korea
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Parallel Readout Technique of Roll-Type Multilayered Optical Memory
Masatoshi Tsuji, Shizuoka University, Japan
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Prospect for High-speed, High-density Phase-Change Memory Device with Gedoped SbTe of a Tuned Composition
Zhe Wu, Korea Institute of Science and Technology, Korea
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Chalcogenide glass - carbon nanotube composite
Tomas Wagner, University of Pardubice, Czech Republic
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Hybrid functional study on liquid and amorphous structures of Ge2Sb2Te5
Seungwu Han, Seoul National University, Korea
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Contributed Posters:
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Ab initio Molecular-dynamics Simulation of Crystal Nucleation in GST
Stephen Elliott, University of Cambridge, UK
Combined density functional and reverse Monte Carlo simulations of amorphous Ge15Te85
J. Kalikka, University of Jyväskylä, Finland
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Crystallization behavior of Si-doped GeTe phase change materials
Yuta Saito, Tohoku University, Japan
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Time and temperature dependence of the amorphous resistance of phase-change line cells
B.J. Kooi, Materials Innovation Institute M2i and University of Groningen, The Netherlands
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Thermal conductivity measurements of Sb-Te alloys by hot strip method
Rui Lan, Tokyo Institute of Technology, Japan
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Kinetic processes in Se-Te glassy system
Jiri Malek, University of Pardubice, Czech Republic
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Crystal growth front instabilities in Ge doped Sb films
Gert Eising , Zernike Institute for Advanced Materials and Materials Innovation, University of Groningen, The Netherlands
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Structure and composition of Ge-Sb-Te thin films grown by molecular beam epitaxy on Si(111) substrates
Alessandro Giussani, Paul Drude Institut für Festkörperelektronik, Germany
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Crystallization behavior of amorphous GeSbTe nonthermally amorphized by femtosecond laser pulse irradiation
Kazuyuki Tajima, Keio University, Japan
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Atomic layer deposition of GeTe
Tiina Sarnet, University of Helsinki, Finland
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Local structure and physical properties of In3SbTe2: Characterizing a member of a fourth family of phase change materials
Anbarasu Manivannan, RWTH Aachen University of Technology, Germany
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Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials
Daniel Krebs, IBM Zurich Research Laboratory, Switzerland
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Electrical characterization of chalcogenide nanowires, self assembled by MOCVD
Roberto Fallica, IMM-CNR, Italy
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Investigation of the scalability limit and thermal stability of low current consuming, nanowire phase change memory cells for high density commercial applications
Behrad Gholipour, University of Southampton, UK