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E\PCOS 2011


During the E\PCOS 2011 Symposium, 30 papers from all over the world were presented. The Poster Sessions were divided in 2 parts: One part with 11 invited posters, and the other part with 14 contributed posters.

Papers and Posters presented at E\PCOS 2011:

Invited Papers


The Basis for Electronic Mechanisms in Ovonic Phase Change Memories
  Stanford R. Ovshinsky, Ovshinsky Innovation LLC, USA

Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical perspective
  Jaakko Akola, Tampere University of Technology, Finland

Large scale molecular dynamics simulations of phase change materials
  Marco Bernasconi, University of Milano-Bicocca, Italy

Local Structure, X-ray Absorption and Localization Properties of GST and GeTe-based Phase Change Materials : an Ab Initio Simulation Approach.
  Jean-Yves Raty, University of Liege, Belgium

Disorder induced Localization in crystalline Phase Change Materials
  Matthias Wuttig, RWTH Aachen University of Technology, Germany

Topological insulating state in interfacial phase-change memory
  Junji Tominaga, National Institute of Advanced Industrial Science and Technology, Japan

Structure of the amorphous phase and the amorphisation mechanism in Ge-Sb-Te alloys
  Alexander Kolobov, National Institute of Advanced Industrial Science and Technology, Japan

Ordering in Crystalline Ge-rich Ge-Sb-Te Alloys: A story of different length scales
  Paul Fons, National Institute of Advanced Industrial Science and Technology, Japan

Hard X-ray Photoelectron Spectroscopy of Crystalline and Amorphous Ge1Cu2Te3
  Keisuke Kobayashi, HiSOR, Hiroshima University, and NIMS Beamline Station at Spring-8, Japan

Cycling of line-cell phase-change random access memory: Evolution of properties
  Bart Kooi, University of Groningen, The Netherlands

Phase change characteristics of Ge1Cu2Te3 films
  Yuji Sutou, Tohoku University, Japan

Thermally Stable, Low Current Consuming Gallium and Germanium Chalcogenides for Consumer and Automotive Memory Applications
  Dan Hewak, University of Southampton, UK

Phase-change control of ferromagnetism in GeTe-based phase change magnetic films
  Xiang Shui Miao, Huazhong University of Science and Technology, China

Understanding on Current-induced Crystallization Process and Faster Set Write Operation Thereof in Non-Volatile Phase Change Memory
  Dae-Hwan Kang, Samsung, Korea

Influence of Dopants on the Crystallization Temperature, Crystal Structure, Resistance, and Threshold Field for Ge2Sb2Te5 and GeTe Phase Change Materials
  Simone Raoux, IBM T. J. Watson Research Center, USA

Local electrical characterization of laser-recorded marks in Ge2Sb2Te5 thin films using conductive-tip atomic force microscopy
  Masud Mansuripur, University of Arizona, Tucson, USA

Two contrastive rapid recrystallization mechanisms revealed in practically used phase-change recording materials
  Toshiyuki Matsunaga, Panasonic, Japan

GeTe-based Phase Change Memories: Effect of stoechiometric variations and N or C addition
  Veronique Sousa, CEA-LETI, France

The Crystallization Behavior of Ga-Sb Materials as a Function of Composition for Phase Change Random Access Memory
  Huai-Yu Cheng, Macronix, Taiwan

Properties of Low-Power Phase-Change Device with GeTe/Sb2Te3 Superlattice Material
  Toshimichi Shintani, National Institute of Advanced Industrial Science and Technology, Japan

Material Selection through Band-alignment Study for PCRAM Integration with GeTe/Sb2Te3 Superlattice Material
  Rong Zhao, Data Storage Institute, Singapore

Phase-Change Memory with Carbon Nanotube Electrodesl
  Eric Pop, University of Illinois at Urbana-Champaign, USA

In-situ TEM observation of Electrical Wind Force Assisted Amorphization in Ge2Sb2Te5 Phase Change Nanowires
  Ritesh Agarwal, University of Pennsylvania, USA

Methodologies to Study the Scalability and Physics of Phase Change Memory devices
  Rakesh Jeyasingh, Stanford University, USA

Giant Surface Plasmon Resonance Switching of Gold Nanoparticles Based on Ultrafast Phase Change of GeSbTe
  Toshiyuki Saiki, Keio University, Japan

Status and Perspective of Chalcogenide PCM in the Semiconductor Industry
  Roberto Bez, Micron, Italy

Size-dependent random-telegraph noise in phase-change memories
  Daniele Ielmini, Politecnico di Milano, Italy

Enabling Technologies for Multilevel Phase-Change Memory
  Haris Pozidis, IBM Research Zurich, Switzerland

Subsystem and System-level Implications of PCM
  Robert Haas, IBM Research Zurich, Switzerland



Poster Session


Invited Posters:

Driving forces of mass transport in phase change materials and their effect on device failures
  Tae-Youl Yang, Seoul National University, Korea

Selective Excitation of Ge-Te Bond by Linearly-Polarized Femtosecond Pulse in GeTe/Sb2Te3 Superlattice
  Kataro Makino, University of Tsukuba, Japan

A 7-bit Readout Circuit in 90 nm CMOS for Drift-Resilient Multi-Level Phase-Change Memory
  Aravinthan Athmanathan, IBM Research Zurich, Switzerland

Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition
  Luca Perniola, CEA-LETI, France

Stacked Chalcogenide Layers for Phase Change Memory
  Santosh Kurinec, Rochester Institute of Technology, USA

Effect of doping on global and local order in crystalline GeTe
  Berangere Hyot, CEA-LETI, France

Characteristics of SbTe and GeTe based Phase Change Materials in Various Confined Cell Structure
  Dong-Ho Ahn, Samsung, Korea

Parallel Readout Technique of Roll-Type Multilayered Optical Memory
  Masatoshi Tsuji, Shizuoka University, Japan

Prospect for High-speed, High-density Phase-Change Memory Device with Gedoped SbTe of a Tuned Composition
  Zhe Wu, Korea Institute of Science and Technology, Korea

Chalcogenide glass - carbon nanotube composite
  Tomas Wagner, University of Pardubice, Czech Republic

Hybrid functional study on liquid and amorphous structures of Ge2Sb2Te5
  Seungwu Han, Seoul National University, Korea

Contributed Posters:

Ab initio Molecular-dynamics Simulation of Crystal Nucleation in GST
  Stephen Elliott, University of Cambridge, UK


Combined density functional and reverse Monte Carlo simulations of amorphous Ge15Te85
  J. Kalikka, University of Jyväskylä, Finland

Crystallization behavior of Si-doped GeTe phase change materials
  Yuta Saito, Tohoku University, Japan

Time and temperature dependence of the amorphous resistance of phase-change line cells
  B.J. Kooi, Materials Innovation Institute M2i and University of Groningen, The Netherlands

Thermal conductivity measurements of Sb-Te alloys by hot strip method
  Rui Lan, Tokyo Institute of Technology, Japan

Kinetic processes in Se-Te glassy system
  Jiri Malek, University of Pardubice, Czech Republic

Crystal growth front instabilities in Ge doped Sb films
  Gert Eising , Zernike Institute for Advanced Materials and Materials Innovation, University of Groningen, The Netherlands

Structure and composition of Ge-Sb-Te thin films grown by molecular beam epitaxy on Si(111) substrates
  Alessandro Giussani, Paul Drude Institut für Festkörperelektronik, Germany

Crystallization behavior of amorphous GeSbTe nonthermally amorphized by femtosecond laser pulse irradiation
  Kazuyuki Tajima, Keio University, Japan

Atomic layer deposition of GeTe
  Tiina Sarnet, University of Helsinki, Finland

Local structure and physical properties of In3SbTe2: Characterizing a member of a fourth family of phase change materials
  Anbarasu Manivannan, RWTH Aachen University of Technology, Germany

Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials
  Daniel Krebs, IBM Zurich Research Laboratory, Switzerland

Electrical characterization of chalcogenide nanowires, self assembled by MOCVD
  Roberto Fallica, IMM-CNR, Italy

Investigation of the scalability limit and thermal stability of low current consuming, nanowire phase change memory cells for high density commercial applications
  Behrad Gholipour, University of Southampton, UK

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