E\PCOS 2011
During the E\PCOS 2011 Symposium, 30 papers from all over the world were presented. The Poster Sessions were divided in 2 parts: One part with 11 invited posters, and the other part with 14 contributed posters.
Papers and Posters presented at E\PCOS 2011:
Invited Papers
The Basis for Electronic Mechanisms in Ovonic Phase Change Memories
Stanford R. Ovshinsky, Ovshinsky Innovation LLC, USA
Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical perspective
Jaakko Akola, Tampere University of Technology, Finland
Large scale molecular dynamics simulations of phase change materials
Marco Bernasconi, University of Milano-Bicocca, Italy
Local Structure, X-ray Absorption and Localization Properties of GST and GeTe-based Phase Change Materials : an Ab Initio Simulation Approach.
Jean-Yves Raty, University of Liege, Belgium
Disorder induced Localization in crystalline Phase Change Materials
Matthias Wuttig, RWTH Aachen University of Technology, Germany
Topological insulating state in interfacial phase-change memory
Junji Tominaga, National Institute of Advanced Industrial Science and Technology, Japan
Structure of the amorphous phase and the amorphisation mechanism in Ge-Sb-Te alloys
Alexander Kolobov, National Institute of Advanced Industrial Science and Technology, Japan
Ordering in Crystalline Ge-rich Ge-Sb-Te Alloys: A story of different length scales
Paul Fons, National Institute of Advanced Industrial Science and Technology, Japan
Hard X-ray Photoelectron Spectroscopy of Crystalline and Amorphous Ge1Cu2Te3
Keisuke Kobayashi, HiSOR, Hiroshima University, and NIMS Beamline Station at Spring-8, Japan
Cycling of line-cell phase-change random access memory: Evolution of properties
Bart Kooi, University of Groningen, The Netherlands
Phase change characteristics of Ge1Cu2Te3 films
Yuji Sutou, Tohoku University, Japan
Thermally Stable, Low Current Consuming Gallium and Germanium Chalcogenides for Consumer and Automotive Memory Applications
Dan Hewak, University of Southampton, UK
Phase-change control of ferromagnetism in GeTe-based phase change magnetic films
Xiang Shui Miao, Huazhong University of Science and Technology, China
Understanding on Current-induced Crystallization Process and Faster Set Write Operation Thereof in Non-Volatile Phase Change Memory
Dae-Hwan Kang, Samsung, Korea
Influence of Dopants on the Crystallization Temperature, Crystal Structure, Resistance, and Threshold Field for Ge2Sb2Te5 and GeTe Phase Change Materials
Simone Raoux, IBM T. J. Watson Research Center, USA
Local electrical characterization of laser-recorded marks in Ge2Sb2Te5 thin films using conductive-tip atomic force microscopy
Masud Mansuripur, University of Arizona, Tucson, USA
Two contrastive rapid recrystallization mechanisms revealed in practically used phase-change recording materials
Toshiyuki Matsunaga, Panasonic, Japan
GeTe-based Phase Change Memories: Effect of stoechiometric variations and N or C addition
Veronique Sousa, CEA-LETI, France
The Crystallization Behavior of Ga-Sb Materials as a Function of Composition for Phase Change Random Access Memory
Huai-Yu Cheng, Macronix, Taiwan
Properties of Low-Power Phase-Change Device with GeTe/Sb2Te3 Superlattice Material
Toshimichi Shintani, National Institute of Advanced Industrial Science and Technology, Japan
Material Selection through Band-alignment Study for PCRAM Integration with GeTe/Sb2Te3 Superlattice Material
Rong Zhao, Data Storage Institute, Singapore
Phase-Change Memory with Carbon Nanotube Electrodesl
Eric Pop, University of Illinois at Urbana-Champaign, USA
In-situ TEM observation of Electrical Wind Force Assisted Amorphization in Ge2Sb2Te5 Phase Change Nanowires
Ritesh Agarwal, University of Pennsylvania, USA
Methodologies to Study the Scalability and Physics of Phase Change Memory devices
Rakesh Jeyasingh, Stanford University, USA
Giant Surface Plasmon Resonance Switching of Gold Nanoparticles Based on Ultrafast Phase Change of GeSbTe
Toshiyuki Saiki, Keio University, Japan
Status and Perspective of Chalcogenide PCM in the Semiconductor Industry
Roberto Bez, Micron, Italy
Size-dependent random-telegraph noise in phase-change memories
Daniele Ielmini, Politecnico di Milano, Italy
Enabling Technologies for Multilevel Phase-Change Memory
Haris Pozidis, IBM Research Zurich, Switzerland
Subsystem and System-level Implications of PCM
Robert Haas, IBM Research Zurich, Switzerland
Poster Session
Invited Posters:
Driving forces of mass transport in phase change materials and their effect on device failures
Tae-Youl Yang, Seoul National University, Korea
Selective Excitation of Ge-Te Bond by Linearly-Polarized Femtosecond Pulse in GeTe/Sb2Te3 Superlattice
Kataro Makino, University of Tsukuba, Japan
A 7-bit Readout Circuit in 90 nm CMOS for Drift-Resilient Multi-Level Phase-Change Memory
Aravinthan Athmanathan, IBM Research Zurich, Switzerland
Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition
Luca Perniola, CEA-LETI, France
Stacked Chalcogenide Layers for Phase Change Memory
Santosh Kurinec, Rochester Institute of Technology, USA
Effect of doping on global and local order in crystalline GeTe
Berangere Hyot, CEA-LETI, France
Characteristics of SbTe and GeTe based Phase Change Materials in Various Confined Cell Structure
Dong-Ho Ahn, Samsung, Korea
Parallel Readout Technique of Roll-Type Multilayered Optical Memory
Masatoshi Tsuji, Shizuoka University, Japan
Prospect for High-speed, High-density Phase-Change Memory Device with Gedoped SbTe of a Tuned Composition
Zhe Wu, Korea Institute of Science and Technology, Korea
Chalcogenide glass - carbon nanotube composite
Tomas Wagner, University of Pardubice, Czech Republic
Hybrid functional study on liquid and amorphous structures of Ge2Sb2Te5
Seungwu Han, Seoul National University, Korea
Contributed Posters:
Ab initio Molecular-dynamics Simulation of Crystal Nucleation in GST
Stephen Elliott, University of Cambridge, UK
Combined density functional and reverse Monte Carlo simulations of amorphous Ge15Te85
J. Kalikka, University of Jyväskylä, Finland
Crystallization behavior of Si-doped GeTe phase change materials
Yuta Saito, Tohoku University, Japan
Time and temperature dependence of the amorphous resistance of phase-change line cells
B.J. Kooi, Materials Innovation Institute M2i and University of Groningen, The Netherlands
Thermal conductivity measurements of Sb-Te alloys by hot strip method
Rui Lan, Tokyo Institute of Technology, Japan
Kinetic processes in Se-Te glassy system
Jiri Malek, University of Pardubice, Czech Republic
Crystal growth front instabilities in Ge doped Sb films
Gert Eising , Zernike Institute for Advanced Materials and Materials Innovation, University of Groningen, The Netherlands
Structure and composition of Ge-Sb-Te thin films grown by molecular beam epitaxy on Si(111) substrates
Alessandro Giussani, Paul Drude Institut für Festkörperelektronik, Germany
Crystallization behavior of amorphous GeSbTe nonthermally amorphized by femtosecond laser pulse irradiation
Kazuyuki Tajima, Keio University, Japan
Atomic layer deposition of GeTe
Tiina Sarnet, University of Helsinki, Finland
Local structure and physical properties of In3SbTe2: Characterizing a member of a fourth family of phase change materials
Anbarasu Manivannan, RWTH Aachen University of Technology, Germany
Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials
Daniel Krebs, IBM Zurich Research Laboratory, Switzerland
Electrical characterization of chalcogenide nanowires, self assembled by MOCVD
Roberto Fallica, IMM-CNR, Italy
Investigation of the scalability limit and thermal stability of low current consuming, nanowire phase change memory cells for high density commercial applications
Behrad Gholipour, University of Southampton, UK