E\PCOS 2010

During the E\PCOS 2010 Symposium, 25 papers from all over the world were presented. The Poster Sessions were divided in 2 parts: One part with 18 invited posters, and the other part with 16 contributed posters.

Papers and Posters presented at E\PCOS 2010:

Invited Papers

New Transformative Possibilities for Ovonic Devices
Stanford R. Ovshinsky, Ovshinsky Innovation LLC, USA

Non-stoichiometry in Phase Change Memory Materials
M. Frumar, Dep. General and Inorg. Chemistry and Res. Center of Univ. Pardubice, Pardubice, Czech Rep.

Phase-change technologies: from PCRAM to probe-storage to processors
C. D. Wright, School of Engineering, Computing and Mathematics; University of Exeter, England

Controlling Charge Transport in Crystalline Phase Change Materials
M. Wuttig, I. Physikalisches Institut, RWTH Aachen University, Aachen, Germany

Casimir forces and phase-change materials
B.J. Kooi, Materials innovation institute M2i and Zernike Institute for Advanced Materials, University of Groningen, The Netherlands

Phase Change Meta-material and Device Characteristics
Junji Tominaga, National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba, Japan

Effect of Ion Implantation on Crystallization Properties of Phase Change Materials
Simone Raoux, IBM T. J. Watson Research Center, New York, USA

GeTe Encapsulated within Single-Walled Carbon Nanotubes
C.E. Giusca, Advanced Technology Institute, University of Surrey, United Kingdom

Challenges in Colloidal Phase Change Nanoparticle Devices
Marissa A. Caldwell, Departments of Chemistry and Electrical Engineering, Stanford University, USA

Phase Change Nanowires: Extremely Low Resistance Drift and Direct Observation of Field-Induced Nucleation and Switching
Ritesh Agarwal, Department of Materials Science and Engineering University of Pennsylvania, USA

PRAM Technology: from Non Volatility to High Performances
D.H. Ahn, Semiconductor R&D Center, Samsung Electronics Co., Ltd, South Korea

Electric-field-enhanced atomic transport in phase change materials as the origin of the set-stuck failure in PRAM
Young-Chang Joo, Department of Materials Science & Engineering, Seoul National Universityy, South Korea

Multi-levels phase change memory using pulse modulation
Sumio Hosaka, Graduate School of Engineering, Gunma University, Japan

The phase-transition in GeTe revisited: Local Versus Average Structure
P. Fons, Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science & Technology, Tsukuba, Japan

Polymorphism in amorphous Ge2Sb2Te5: comparison of melt-quenched and as-deposited structures
J. Akola, Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany

Phase change materials, a model system to study nucleation processes
Bong-Sub Lee, Department of Materials Science & Engineering, University of Illinois at Urbana-Champaign, Illinois, USA

Poster Session

Invited and contributed Posters:

Study of Ge2Sb2Te5, GeTe and N-doped GeTe for application in the Phase-Change Random Access Memories (PCRAM)
Jean Claude Bastien , CEA/LETI, Grenoble, France

Demonstration of a High-Speed Multi-Level Cell Phase-Change Memory Using Ge-doped SbTe
Gang Zhang , Electronic Materials Center, Korea Institute of Science and Technology, Seoul , South Korea

Phase Change Alloys for Very High Temperature Data Retention Applicable for Automotive Applications
Charles Dennison, Ovonyx, Inc. Rochester Hills, MI 48309, USA

Ultrafast phase change in Ge2Sb2Te5 superlattices monitored by coherent phonon spectroscopy
Muneaki Hase, National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba, Japan

Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase
D. Ielmini , Dipartimento di Elettronica e Informazione, Politecnico di Milano and IU.NET, Italy

Hard X-ray Photoelectron Spectroscopy, Chemical Bonding, and First Principle Calculations in Phase Change Memory Materials
K. Kobayashi , National Institute for Materials Science, Hyogo, Japan

Raman spectra of amorphous phase change materials from first principles
M. Bernasconi , Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Milano, Italy

Nanoscale writing and erasing of amorphous marks in a GeSbTe thin film with a gold nanoparticle by femtosecond laser irradiation
Toshiharu Saiki, Department of Electronics and Electrical Engineering, Keio University, Kanagawa, Japan

GST, GeTe and C-doped GeTe materials for Phase Change Memory cells
V. Sousa , CEA, LETI, MINATEC, Grenoble, France

Seeded Crystallisation and Enhanced Phase-Change Materials
Robert E. Simpson , National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba, Japan

Phase Change Gallium and Germanium Chalcogenides for Optical, Electronic and Plasmonic Switching
D.W. Hewak , Optoelectronics Research Centre, University of Southampton, United Kingdom

MOCVD GST for High Performance Phase Change Memory Devices
J. F. Zheng , ATMI Inc., Danbury, CT 06810, USA

Phase Change Memory Technology for 90nm Embedded Non Volatile Memory Applications
Paola Zuliani, Technology R&D, STMicroelectronics, Agrate Brianza (MI), Italy

Selective CVD deposition of phase change material alloys
Alejandro G. Schrotta, IBM T. J. Watson Research Center, Yorktown Heights, New York, USA

Crystallization processes of eutectic Si-Te and Ge-Te phase change materials
Yuta Saito , Department of Materials Science, Tohoku University, Sendai, Japan

Phase change behavior of Ge1Cu2Te3 thin films
Yuji Sutou , Department of Materials Science, Tohoku University, Sendai, Japan

Towards ultra-high density scanning-probe memories using re-writeable phase-change media
L Wang , College of Engineering, Mathematics and Physical Sciences, University of Exeter, United Kingdom

Gillespie type cellular automata approach for phase-change device modelling
Jorge Vazquez, College of Engineering, Mathematics and Physical Sciences, University of Exeter, United Kingdom

Crystallization study of GeSb4 phase change material thin films
A. Bastard , CEA, LETI, MINATEC, Grenoble, France

Exploiting optical near-fields for phase switching and nanopatterning
J. Siegel , Instituto de Optica, CSIC, Madrid, Spain

Local structure of amorphous Ge8Sb2Te11
M. Krbal , National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba, Japan

Phase transitions in Ge1-xTex alloys
E. Carria , Dipartimento di Fisica ed Astronomia, Università di Catania, Catania, Italy

Explosive crystallization in phase change thin films
Gert Eising , Zernike Institute for Advanced Materials, University of Groningen, The Netherlands.

Molecular beam epitaxy of GST controlled by quadrupole mass spectrometry
Wolfgang Braun ,Paul-Drude-Institut f¨ur Festkoerperelektronik, Berlin, Germany

Real structure of metastable Ge-Sb-Te and Ge-Bi-Te materials
M. N. Schneider , LMU Munich, Department of Chemistry, Munich, Germany