E\PCOS 2010
During the E\PCOS 2010 Symposium, 25 papers from all over the world were presented. The Poster Sessions were divided in 2 parts: One part with 18 invited posters, and the other part with 16 contributed posters.
Papers and Posters presented at E\PCOS 2010:
Invited Papers
New Transformative Possibilities for Ovonic Devices
Stanford R. Ovshinsky, Ovshinsky Innovation LLC, USA
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Non-stoichiometry in Phase Change Memory Materials
M. Frumar, Dep. General and Inorg. Chemistry and Res. Center of Univ. Pardubice, Pardubice, Czech Rep.
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Phase-change technologies: from PCRAM to probe-storage to processors
C. D. Wright, School of Engineering, Computing and Mathematics; University of Exeter, England
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Controlling Charge Transport in Crystalline Phase Change Materials
M. Wuttig, I. Physikalisches Institut, RWTH Aachen University, Aachen, Germany
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Casimir forces and phase-change materials
B.J. Kooi, Materials innovation institute M2i and Zernike Institute for Advanced Materials, University of Groningen, The Netherlands
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Phase Change Meta-material and Device Characteristics
Junji Tominaga, National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba, Japan
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Effect of Ion Implantation on Crystallization Properties of Phase Change Materials
Simone Raoux, IBM T. J. Watson Research Center, New York, USA
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GeTe Encapsulated within Single-Walled Carbon Nanotubes
C.E. Giusca, Advanced Technology Institute, University of Surrey, United Kingdom
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Challenges in Colloidal Phase Change Nanoparticle Devices
Marissa A. Caldwell, Departments of Chemistry and Electrical Engineering, Stanford University, USA
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Phase Change Nanowires: Extremely Low Resistance Drift and Direct Observation of Field-Induced Nucleation and Switching
Ritesh Agarwal, Department of Materials Science and Engineering University of Pennsylvania, USA
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PRAM Technology: from Non Volatility to High Performances
D.H. Ahn, Semiconductor R&D Center, Samsung Electronics Co., Ltd, South Korea
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Electric-field-enhanced atomic transport in phase change materials as the origin of the set-stuck failure in PRAM
Young-Chang Joo, Department of Materials Science & Engineering, Seoul National Universityy, South Korea
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Multi-levels phase change memory using pulse modulation
Sumio Hosaka, Graduate School of Engineering, Gunma University, Japan
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The phase-transition in GeTe revisited: Local Versus Average Structure
P. Fons, Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science & Technology, Tsukuba, Japan
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Polymorphism in amorphous Ge2Sb2Te5: comparison of melt-quenched and as-deposited structures
J. Akola, Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Phase change materials, a model system to study nucleation processes
Bong-Sub Lee, Department of Materials Science & Engineering, University of Illinois at Urbana-Champaign, Illinois, USA
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Poster Session
Invited and contributed Posters:
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Study of Ge2Sb2Te5, GeTe and N-doped GeTe for application in the Phase-Change Random Access Memories (PCRAM)
Jean Claude Bastien , CEA/LETI, Grenoble, France
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Demonstration of a High-Speed Multi-Level Cell Phase-Change Memory Using Ge-doped SbTe
Gang Zhang , Electronic Materials Center, Korea Institute of Science and Technology, Seoul , South Korea
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Phase Change Alloys for Very High Temperature Data Retention Applicable for Automotive Applications
Charles Dennison, Ovonyx, Inc. Rochester Hills, MI 48309, USA
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Ultrafast phase change in Ge2Sb2Te5 superlattices monitored by coherent phonon spectroscopy
Muneaki Hase, National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba, Japan
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Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase
D. Ielmini , Dipartimento di Elettronica e Informazione, Politecnico di Milano and IU.NET, Italy
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Hard X-ray Photoelectron Spectroscopy, Chemical Bonding, and First Principle Calculations in Phase Change Memory Materials
K. Kobayashi , National Institute for Materials Science, Hyogo, Japan
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Raman spectra of amorphous phase change materials from first principles
M. Bernasconi , Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Milano, Italy
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Nanoscale writing and erasing of amorphous marks in a GeSbTe thin film with a gold nanoparticle by femtosecond laser irradiation
Toshiharu Saiki, Department of Electronics and Electrical Engineering, Keio University, Kanagawa, Japan
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GST, GeTe and C-doped GeTe materials for Phase Change Memory cells
V. Sousa , CEA, LETI, MINATEC, Grenoble, France
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Seeded Crystallisation and Enhanced Phase-Change Materials
Robert E. Simpson , National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba, Japan
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Phase Change Gallium and Germanium Chalcogenides for Optical, Electronic and Plasmonic Switching
D.W. Hewak , Optoelectronics Research Centre, University of Southampton, United Kingdom
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MOCVD GST for High Performance Phase Change Memory Devices
J. F. Zheng , ATMI Inc., Danbury, CT 06810, USA
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Phase Change Memory Technology for 90nm Embedded Non Volatile Memory Applications
Paola Zuliani, Technology R&D, STMicroelectronics, Agrate Brianza (MI), Italy
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Selective CVD deposition of phase change material alloys
Alejandro G. Schrotta, IBM T. J. Watson Research Center, Yorktown Heights, New York, USA
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Crystallization processes of eutectic Si-Te and Ge-Te phase change materials
Yuta Saito , Department of Materials Science, Tohoku University, Sendai, Japan
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Phase change behavior of Ge1Cu2Te3 thin films
Yuji Sutou , Department of Materials Science, Tohoku University, Sendai, Japan
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Towards ultra-high density scanning-probe memories using re-writeable phase-change media
L Wang , College of Engineering, Mathematics and Physical Sciences, University of Exeter, United Kingdom
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Gillespie type cellular automata approach for phase-change device modelling
Jorge Vazquez, College of Engineering, Mathematics and Physical Sciences, University of Exeter, United Kingdom
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Crystallization study of GeSb4 phase change material thin films
A. Bastard , CEA, LETI, MINATEC, Grenoble, France
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Exploiting optical near-fields for phase switching and nanopatterning
J. Siegel , Instituto de Optica, CSIC, Madrid, Spain
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Local structure of amorphous Ge8Sb2Te11
M. Krbal , National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba, Japan
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Phase transitions in Ge1-xTex alloys
E. Carria , Dipartimento di Fisica ed Astronomia, Università di Catania, Catania, Italy
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Explosive crystallization in phase change thin films
Gert Eising , Zernike Institute for Advanced Materials, University of Groningen, The Netherlands.
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Molecular beam epitaxy of GST controlled by quadrupole mass spectrometry
Wolfgang Braun ,Paul-Drude-Institut f¨ur Festkoerperelektronik, Berlin, Germany
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Real structure of metastable Ge-Sb-Te and Ge-Bi-Te materials
M. N. Schneider , LMU Munich, Department of Chemistry, Munich, Germany
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