E\PCOS 2009
During E\PCOS 2009 Symposium, 25 invited papers and 20 posters have been presented to give insight into the latest technology achievements in phase change science.
Papers and Posters presented at E\PCOS 2009:
Invited Papers
Atomic and electronic structures of amorphous GST
Dr. Jino Im, Department of Physics and Astronomy, Seoul National University, Korea
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Investigation of the structural order in amorphous GeTe-based alloys
Dr. Carria, Università di Catania and MATIS CNR-INFM, Catania, Italy
Structural analysis of GeSbTeSe phase-change materials
Toshiyuki Matsunaga, Materials Science and Analysis Technology Center, Panasonic Corporation , Japan
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Density functional simulations of phase change materials: disordered phases of Ge8Sb2Te11 and Ag/In/Sb/Te alloys
J. Akola, Institut fur Festkörperforschung, Forschungszentrum Jülich , Germany
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Ab initio molecular-dynamics (AIMD) simulations of homogeneous and heterogeneous crystallization in phase-change memory materials: in silico design?
Prof. S.R. Elliott, Department of Chemistry, University of Cambridge , England
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Theoretical and Experimental Studies on Superlattice Ge2Sb2Te5
Dr. Junji Tominaga, Center for Applied Near-field Optics Research (CAN-FOR), National Institute of Advanced Industrial Science and Technology (AIST), Japan
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Crystallization characteristics of Ge-Sb and Ge-Te phase change materials
Dr. Simone Raoux, IBM T. J. Watson Research Center, USA
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Atomic Layer Deposition of Ge2Sb2Te5 thin films
Prof. Mikko Ritala, Department of Chemistry, University of Helsinki, Finland
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Binary SbTe Phase Diagrams developed by Material Library Technique
Dr. Ting Zhang, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,, China
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Sub-picosecond non-melting structure change in a GeSbTe film induced by femtosecond pulse excitation
Prof. Toshiharu Saiki, School of Integrated Design Engineering, Keio University, Japan
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Bridging carrier transport and amorphous dynamics in phase change materials
Prof. Andrea L. Lacaita, Politecnico di Milano, Italy
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Multilevel Phase Change Memory Modeling and Experimental Characterization
Dr. Aggeliki Pantazi, IBM Zurich Research Laboratory, Switzerland
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Reliability Characterization of Phase Change Memory
Dr. Bob Gleixner, Numonyx, USA
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The structure of the amorphous phase as the basis for the rapid change in DVD materials
Dr. Shinji Kohara, JASRI, Japan
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Bonding defects and bonding strength in liquid and amorphous SnSe2
Dr. M. Micoulaut, LPTMC Université Pierre et Marie Curie, France
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Electric resistivities of liquid Sb2Te3 and Ge2Sb2Te5
Dr. Rie Endo, Tokyo Institute of Technology, Japan
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Employing advanced characterization tools for the study of phase change materials
Dr. Carl Schlockermann, 1st Institute of Physics 1A, RWTH Aachen University, Aachen, Germany
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Towards practical use of super-resolution readout media
Dr. Takayuki Shima, Center for Applied Near-Field Optics Research, National Institute of Advanced Industrial Science and Technology, Japan
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High capacity SuperRENS-ROM disc with InSb active layer: Towards 76 GB hybrid dual level.
Dr. Berengere Hyot, CEA, LETI, MINATEC, France
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100 GB rewritable triple-layer optical disk having GeSbTe films
Dr. N. Yamada, Panasonic, Japan
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Crystallization studies of doped SbTe phase-change thin films and PRAM line cells: Growth rate determination by automated TEM image analysis
Dr. Jasper Oosthoek, Groningen University, The Netherlands
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Size-dependent phase transitions and morphological control over phase change properties using colloidal nanoparticle building blocks
Dr. Delia Milliron, Lawrence Berkeley National Laboratory, USA
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Investigations on Ge-Te-Si glasses and their suitability for phase change memory applications
Dr. M. Anbarasu,Department of Instrumentation, Indian Institute of Science, India
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Recent Advances in Conduction Mode Scanning Probes for Phase Change Probe Storage Applications
Dr.Harish Bhaskaran, IBM Zurich Research Laboratory, Switzerland
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Phase Change Materials: The Importance of Resonant Bonding
Prof. M. Wuttig, RWTH Aachen University, I. Physikalisches Institut (IA), 52056 Aachen, Germany
Poster Session
Possibility of nanoscale amorphization of GeSbTe by femtosecond pulse excitation
Y. Hongo, School of Integrated Design Engineering, Keio University 3-14-1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223-8522, Japan
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Switching of surface plasmon resonance of a gold nanoparticle upon crystallization in a GeSbTe film
H. Santoh, School of Integrated Design Engineering, Keio University 3-14-1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223-8522, Japan
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A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process
Fabrizio Buscemi, Advanced Research Center on Electronic Systems and Department of Electronics, Computer Science, and Systems, University of Bologna, I-40136 Bologna, Italy
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Characterization of Phase Change Material (PCM) to TiW electrode contacts
Deepu Roy, NXP Semiconductors, 5656 AE, Eindhoven, The Netherlands
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Model of Ultra-Fast Heating and Crystallisation in Phase-Change Media
M.M. Aziz, School of Engineering, Computing and Mathematics, University of Exeter, United Kingdom
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Characterization of interface between amorphous Ge2Sb2Te5 and TiN by x-ray photoelectron spectroscopy
Doo Seok Jeong, Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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Optical switching of epitaxial Ge2Sb2Te5 films
Timur Flissikowski, Paul-Drude-Institut fuer Festkoerperelektronik,Berlin, Germany
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Ultrafast measurements of optically induced linear birefringence in GeSbTe films
Y. Liu, School of Physics, University of Exeter, United Kingdom
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Nanosecond switching in GeTe phase change memory cells
G. Bruns, I. Physikalische Institut (IA), RWTH Aachen, Germany
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Optical properties of post-annealed Ge2Sb2Te5 films
Tamihiro Gotoh,, Graduate School of Engineering, Gunma University, Japan
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Dynamics of the Negative Thermal Expansion in Tellurium based liquid alloys
C. Otjacques, Condensed Matter Physics Laboratory, University of Liège, Belgium
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Optimization of the Recording and Readout Performance of Phase-Change Media for Scanning Probe Storage Applications
L Wang, School of Engineering, Computing and Mathematics University of Exeter, United Kingdom
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Thermal resistance characterization of materials for Phase-Change Memory
Enrico Varesi, Numonyx, Agrate Brianza (Milan), Italy
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Simulation of Transport and Resistance Drift in amorphous Ge15Sb85
Daniel Krebs, I. Physikalische Institut (IA), RWTH Aachen, Germany
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Kinetic and thermodynamic aspects of crystallization in the phase-change material Ge15Sb85
P. Zalden, I. Physikalische Institut (IA), RWTH Aachen, Germany
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Molecular Beam Epitaxy of GST
Wolfgang Braun, Paul-Drude-Institut f¨ur Festk¨orperelektronik, Berlin, Germany
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Ab-initio study of the structural and vibrational properties of amorphous phase change materials: Sb2Te3, GeTe and InGeTe2
S. Caravati, Department of Chemistry and Applied Biosciences, ETH Zurich, USI Campus, Lugano, Switzerland
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Novel crystal imperfection: transrotational nanostructure and its role for local amorphous – crystalline transitions and phase change materials
V. Yu. Kolosov, Ural State University, Ekaterinburg, Russia
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Preparation of amorphous chalcogenide alloys by twin roller quenching and thermal co-evaporation
A. Pradel, Institut Charles Gerhardt UMR 5253 CNRS Université Montpellier, Montpellier cedex 5 France
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Bulk synthesis and kinetic stabilization of metastable GST and GBT phases by stress and strain
Matthias N. Schneider, LMU München, München, Germany