E\PCOS

Papers and Posters presented at E\PCOS 2008:

Invited Papers

The New Information Age
  Stanford Ovshinsky, USA

Recent Results of the Study of Phase Change Memory Materials
  Miloslav Frumar, Purdubice Univ., Czech Republic

Fundamental Size-Effects in Phase Change Nanowires
  Ritesh Agarwal, University of Pennsylvania, USA

Understanding of the fine stability of amorphous Ge2Sb2Te5 by the structural analyses
  Toshiyuki Matsunaga,Panasonic, Japan

Reversible resistance switching in Ge-Sb-Te thin films without amorphous-crystalline phase-change
  Bart Kooi, University of Groningen, Netherlands

Density functional simulations of Te-based phase change materials
  Robert O. Jones, University of Jyväskylä, Finland

Computer simulation of amorphous-crystal phase transformations of GST-225 memory material
  S.R. Elliott, Cambridge Univ., UK

The impact of a signal prossing technique on the near field recording performance
  Ariyoshi Nakaoki, Sony, Japan

Recent Progress of Phase Change Random Access Memory (PRAM)
  Junsoo Bae, Samsung, Korea

Nano- and Ultrafast Phase Change
  Shi Luping, DSI, Singapore

Atomic Displacement Induced by Valence and Core Level Excitations in Solids
  Yosuke Kayanuma, Osaka Prifecture Univ., Japan

Pressure-induced structural changes in phase-change materials
  A. Kolobov, AIST, Japan

The Bridge Structure for Advanced Phase Change Memory Investigations
  Yi-Chou Chen, Macronix, Taiwan

Scanning Probe-Based Phase-Change Terabyte Memories
  David Wright, Exeter Univ., England

Modeling of switching phenomena in phase change memory (PCM) devices
  Daniele Ielmini , Milano Univ., Italy

Time-resolved investigation of nanosecond crystal growth in rapid-phase-change materials for digital versatile disc
  Yoshihito Tanaka, Riken, Japan

The origin of activation energy in phase-change materials
  Jumji Tominaga, AIST, Japan

Ab-initio simulation of amorphous Ge2Sb2Te5 and related binary chalcogenides
  Marco Bernasconi, University of Milano-Bicocca, Italy

Development Lines for Phase-Change Memory
  Roberto Bez, Numonyx, Italy

Scalability of thermal phase-change storage and memory
  Hendrik Hamann, IBM T J Watson, USA

Chemical synthesis and solution phase deposition of phase change materials
  Delia Milliron, Lawrence Berkeley National Laboratory, USA

Crystallization Times of As-deposited and Melt-quenched Amorphous Phase Change Materials
  Simone Raoux, IBM, USA

Unique amorphous structure of Ge2Sb2Te5 alloy
  Zhimei Sun, Department of Materials Science and Engineering, Xiamen University, China

Rewritable dual-layer recording with near-field coupled SIL system
  Masahiro Birukawa, Panasonic, Japan

Drift of programmed resistance in electrical phase change memory devices
  Sergey Kostylev, Ovonyx Technologies, Inc, USA

Phase Change Materials: The Importance of Resonant Bonding
  Dominic Lencer, Aachen Univ., Germany

Poster Session

Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming
  Suyoun Lee, Korea Institute of Science and Technology, Seoul 136-791, Korea

Monte Carlo simulation of charge transport in amorphous GST
  Enrico Piccinini, Advanced Research Center on Electronic Systems, University of Bologna, I-40136 Bologna, Italy

Reduction in crystallization time of Sb:Te films through addition of Bi
  R. E. Simpson, Center for Applied Near-Field Optics Research (CAN-FOR), Ibaraki Tsukuba 305-8562, Japan

Crystallization study of reamorphized-Ge2Sb2Te5 sandwiched by dielectric films
  Takayuki Shima, Center for Applied Near-Field Optics Research (CAN-FOR), Ibaraki Tsukuba 305-8562, Japan

Structural relaxation in chalcogenide-based phase change memories (PCMs): from defect-annihilation kinetic to device-reliability prediction
  S. Lavizzari, Dipartimento di Elettronica e Informazione, Politecnico di Milano and IU.NET, 20133 Milano, Italy

Investigation on the improved superresolution effect by nitrogen addition in Ge-doped SbTe
  Hyun Seok Lee, Thin Film Materials Research Center, Korea Institute of Science and Technology, Sungbuk-ku, Seoul 136-791, Korea

Low power writing in lateral type phase-change memory
  Sumio Hosaka, Department of Nano-Material Systems, Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan

Structural and Thermal Properties of Phase Change Materials in Nanometer Scale
  Bong-Sub Lee , Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, USA

Sub-nanosecond structural observations of the optical recording process using time-resolved x-ray absorption spectroscopy
  Paul Fons, Center for Applied Near-Field Optics Research (CAN-FOR), National Institute of Advanced Industrial Science and Technology, Ibaraki Tsukuba 305-8562, Japan

Medium Long Term Thermal Stability of Flash Evaporated films with composition of Ge2Sb2Te5
  Tomas Wagner, University of Pardubice, Faculty of Chemical Technology, Department of General and Inorganic Chemistry and Research Centre, Czech Republic

RF magnetron sputtering of Se doped Ge-Sb-Te thin films
  J. Gutwirth, University of Pardubice, Faculty of Chemical Technology, Department of General and Inorganic Chemistry and Research Centre, Czech Republic

Comparison of laser induced crystallization process of undoped and Ag doped Sb40S60 and Sb33S67 thin films
  J. Gutwirth, University of Pardubice, Faculty of Chemical Technology, Department of General and Inorganic Chemistry and Research Centre, Czech Republic

Optical and Electrical Propoerties of Sb-rich Sb-Se System Thin Films.
  L. Hromadko, University of Pardubice, Faculty of Chemical Technology, Department of General and     Inorganic Chemistry and Research Centre, Czech Republic

Reduction of programming current density with isotropic PCM deep scaling.
  L. Semyon D. Savransky, The TRIZ Experts , 6015 PepperTree Court, Newark, CA 94560, USA