E\PCOS 2007

 

During E\PCOS 2007 the latest scientific results in Phase Change and Ovonic research work were presented.

Papers presented at E\PCOS 2007:

Invited Papers

 

 

The Ovonic Phase Change Memory - Past, Present, Future
  Stanford Ovshinsky, ECD, USA

 

Making the ISOM Optical Memory Roadmap
  Takeshi Maeda, Hitachi, Japan

 

Progress and Perspective of Phase-Change Memory
  Robert Bez, STMicroelectronics, Italy

 

Study of phase-change recording based on the NA of 1.8 or larger
  Ariyoshi Nakaoki, Sony Japan

 

Media Technologies for 40GB Dual-layer Phase-change recording for HD DVD System
  Tsukasa Nakai, Toshiba, Japan

 

Super-Resolution ROM disk with a semi-conductive InSb active layer: influence of the crystalline microstructure
  A. Berangere Hyott, Leti, France

 

Controlling Material Properties in new Phase Change Alloys beyond the pseudo-binary line
  W. Welnic, RWTH Aachen, Germany

 

Overview on the GeTe-Sb2Te3 pseudobinary crystalline phase
  Toshiyuki Matsunaga, Matsushita, Japan

 

Structural basis for fast phase change of DVD-RAM-Topological order in the amorphous phase
  Shinji Kohara, Jasrii, Japan

 

Sub-nanosecond laser-induced structural changes in the phase change material
  Paul Fons, Center for Applied Near-Field Optics Research, Japan

 

Thermal Properties of Atomically Controlled [GeTe/Sb2Te3] Superlattice
  Zhao Rong, Data Storage Institute, Singapore

 

Thermal Properties of Atomically Controlled [GeTe/Sb2Te3] Superlattice
  Junji Tominaga, AIST, Japan

 

Glass Transition and Crystallization in Phase Change Materials
  M. Salinga , Aachen Univ., Germany

 

Detecting Nuclei in Phase-change Materials by Fluctuation Electron Microscopy
  Bong-Sub Lee, Illinois Univ., US

 

Physical modeling of conduction and switching mechanisms in phase change memory cells
  Daniele Ielmini , Milano Univ., Italy

 

Program window of doped Sb2Te phase change line cells
  Friso Jedema, NXP, Netherlands

 

Programming Speed in Ovonic Unified Memory
  Sergey Kostylev, Ovonyx Technologies,Inc., USA

 

Characteristics of Phase Change Memory Devices based on Ge-doped SbTe and its derivatives
  Byung-Ki Cheong, KIST, Korea

 

X-ray diffraction studies of phase change nanoparticles produced by self-assembly-based lithographic techniques
  Simone Raoux, IBM, USA

 

Thin films of Ge2Sb2Te5 prepared by pulsed laser deposition, properties and plume particles analysis
  Tomas Wagner, University of Pardubice, Czech Republic

 

Resistance switching without phase-change in crystalline marks in chalcogenide films
  Ramanathaswamy Pandian , Groningen Univ., Netherlands

 

Microprocessor and multi-state memory devices using phase-change technology
  David Wright, Exeter Univ., England