E\PCOS 2007
During E\PCOS 2007 the latest scientific results in Phase Change and Ovonic research work were presented.
Papers presented at E\PCOS 2007:
Invited Papers
The Ovonic Phase Change Memory - Past, Present, Future
Stanford Ovshinsky, ECD, USA
Making the ISOM Optical Memory Roadmap
Takeshi Maeda, Hitachi, Japan
Progress and Perspective of Phase-Change Memory
Robert Bez, STMicroelectronics, Italy
Study of phase-change recording based on the NA of 1.8 or larger
Ariyoshi Nakaoki, Sony Japan
Media Technologies for 40GB Dual-layer Phase-change recording for HD DVD System
Tsukasa Nakai, Toshiba, Japan
Super-Resolution ROM disk with a semi-conductive InSb active layer: influence of the crystalline microstructure
A. Berangere Hyott, Leti, France
Controlling Material Properties in new Phase Change Alloys beyond the pseudo-binary line
W. Welnic, RWTH Aachen, Germany
Overview on the GeTe-Sb2Te3 pseudobinary crystalline phase
Toshiyuki Matsunaga, Matsushita, Japan
Structural basis for fast phase change of DVD-RAM-Topological order in the amorphous phase
Shinji Kohara, Jasrii, Japan
Sub-nanosecond laser-induced structural changes in the phase change material
Paul Fons, Center for Applied Near-Field Optics Research, Japan
Thermal Properties of Atomically Controlled [GeTe/Sb2Te3] Superlattice
Zhao Rong, Data Storage Institute, Singapore
Thermal Properties of Atomically Controlled [GeTe/Sb2Te3] Superlattice
Junji Tominaga, AIST, Japan
Glass Transition and Crystallization in Phase Change Materials
M. Salinga , Aachen Univ., Germany
Detecting Nuclei in Phase-change Materials by Fluctuation Electron Microscopy
Bong-Sub Lee, Illinois Univ., US
Physical modeling of conduction and switching mechanisms in phase change memory cells
Daniele Ielmini , Milano Univ., Italy
Program window of doped Sb2Te phase change line cells
Friso Jedema, NXP, Netherlands
Programming Speed in Ovonic Unified Memory
Sergey Kostylev, Ovonyx Technologies,Inc., USA
Characteristics of Phase Change Memory Devices based on Ge-doped SbTe and its derivatives
Byung-Ki Cheong, KIST, Korea
X-ray diffraction studies of phase change nanoparticles produced by self-assembly-based lithographic techniques
Simone Raoux, IBM, USA
Thin films of Ge2Sb2Te5 prepared by pulsed laser deposition, properties and plume particles analysis
Tomas Wagner, University of Pardubice, Czech Republic
Resistance switching without phase-change in crystalline marks in chalcogenide films
Ramanathaswamy Pandian , Groningen Univ., Netherlands
Microprocessor and multi-state memory devices using phase-change technology
David Wright, Exeter Univ., England