E\PCOS 2004
The topics of E\PCOS 2004 has focused on High Speed Phase Change Recording and on the latest advances in Ovonic Memories.
Papers presented at E\PCOS 2004:
The Ovonic Cognitive Computer - a New Paradigm.
Stanford R. Ovshinsky, ECD, USA
HD DVD Optical Technology Overview.
Dr. Hisashi Yamada,Toshiba, Japan
Optically-induced Photo-darkening and Photo-crystallisation in Amorphous Chalcogenides Films.
Dr. Tomas Wagner, University of Parubice; Czech Republic
Phase Change Materials: from Crystal Structure to Kinetics.
Dr. Johannes Kalb, Harvard University, USA
Amorphous-to-fcc Transition in Ge2Sb2Te5 Thin Films: Kinetics and Effects of Doping.
Dr. Stefania Previtera, IMM, CNR, Italy
The Kinetic Analysis of Phase-Change Data Storage Media.
Prof. A. Lindsay Greer, Cambridge University, U.K.
Crystal Structure and its Thermal Behaviour of Ge8Sb2Te11 (GeTe:SbTe3=8:1), one of the Materials Suitable for High-speed and High-density Phase Change Recording.
Dr. Toshiyuki Matsunaga, Matsushita Techno Research, Japan
In-situ TEM study of the Crystallization of Fast-growth Doped SbxTe Alloys.
Dr. ir. Bart Kooi, University of Groningen; The Netherlands
Dynamics of Rapid Melting and Resolidification of Sb-based Phase Change Materials in Optical Disk.
Dr. Berangere Hyot, LETI, France
The Effect of Boundary Thermal Resistance on HD DVD-ARW Optical Recording Media.
Dr. Sumio Ashida, Toshiba, Japan
Ferroelectrics of Chalcogenides and Optical Super-Resolution.
Dr. Juji Tominaga, Centre of Applied Near-Field Optics Research
Plasmonic Near-field Phase Change Recording.
Prof. Din-Ping Tsai, National Taiwan University, Tawian
High Speed Reversible Phase-change Optical Recording in GeSb-based Alloys.
Dr. Dimitre Dimitrov, ITRI, Taiwan
Can we Reach Tbit/sq.in. Storage Densities with Phase-Change Media?.
Prof. C. David Wright, University of Exeter, U.K.
Media Development for DVD+RW Phase Change Recording.
Dr. ir. Derk Jan Adelerhof, Philips, The Netherlands
Advances in Phase Change Memory Technology.
Dr. Enrico Varesi, STMircoelectronics, Italy
A Novel Cell Technology for Phase Change RAM.
Dr. Sung Lea Cho, Samsung, South Korea
Investigation on Non-rotation and Non-volatile Phase Change Memory.
Prof. Chong Tow Chong, University of Singapore, Singapore
Lateral Design for Phase Change Random Access Memory Cells with Low-current Consumption.
Dr. Peter Haring Bolivar, RWTH Aachen, Germany
Macroscopic Studies on Etching Characteristics of Phase Change Recording Films.
Dr. Yumiko Anzai, Hitachi, Japan
Ultra-Multilayered Optical Recording Using Electro chromic Material.
Dr. Ryuji Sato, NHK, Japan
Phase Change Memory: Rewritable Optical Disks and Electronic Non-volatile Memories.
Dr. Takeo Ohta, ECD, Japan