E\PCOS 2004

 

The topics of E\PCOS 2004 has focused on High Speed Phase Change Recording and on the latest advances in Ovonic Memories.

Papers presented at E\PCOS 2004:

The Ovonic Cognitive Computer - a New Paradigm.
  Stanford R. Ovshinsky
, ECD, USA

 

HD DVD Optical Technology Overview.
  Dr. Hisashi Yamada,Toshiba, Japan

 

Optically-induced Photo-darkening and Photo-crystallisation in Amorphous Chalcogenides Films.
  Dr. Tomas Wagner, University of Parubice; Czech Republic

 

Phase Change Materials: from Crystal Structure to Kinetics.
  Dr. Johannes Kalb, Harvard University, USA

 

Amorphous-to-fcc Transition in Ge2Sb2Te5 Thin Films: Kinetics and Effects of Doping.
  Dr. Stefania Previtera, IMM, CNR, Italy

 

The Kinetic Analysis of Phase-Change Data Storage Media.
  Prof. A. Lindsay Greer, Cambridge University, U.K.

 

Crystal Structure and its Thermal Behaviour of Ge8Sb2Te11 (GeTe:SbTe3=8:1), one of the Materials Suitable for High-speed and High-density Phase Change Recording.
  Dr. Toshiyuki Matsunaga, Matsushita Techno Research, Japan

 

In-situ TEM study of the Crystallization of Fast-growth Doped SbxTe Alloys.
  Dr. ir. Bart Kooi, University of Groningen; The Netherlands

 

Dynamics of Rapid Melting and Resolidification of Sb-based Phase Change Materials in Optical Disk.
  Dr. Berangere Hyot, LETI, France

 

The Effect of Boundary Thermal Resistance on HD DVD-ARW Optical Recording Media.
  Dr. Sumio Ashida, Toshiba, Japan

 

Ferroelectrics of Chalcogenides and Optical Super-Resolution.
  Dr. Juji Tominaga, Centre of Applied Near-Field Optics Research

 

Plasmonic Near-field Phase Change Recording.
  Prof. Din-Ping Tsai, National Taiwan University, Tawian

 

High Speed Reversible Phase-change Optical Recording in GeSb-based Alloys.
  Dr. Dimitre Dimitrov, ITRI, Taiwan

 

Can we Reach Tbit/sq.in. Storage Densities with Phase-Change Media?.
  Prof. C. David Wright, University of Exeter, U.K.

 

Media Development for DVD+RW Phase Change Recording.
  Dr. ir. Derk Jan Adelerhof, Philips, The Netherlands

 

Advances in Phase Change Memory Technology.
  Dr. Enrico Varesi, STMircoelectronics, Italy

 

A Novel Cell Technology for Phase Change RAM.
  Dr. Sung Lea Cho, Samsung, South Korea

 

Investigation on Non-rotation and Non-volatile Phase Change Memory.
  Prof. Chong Tow Chong, University of Singapore, Singapore

 

Lateral Design for Phase Change Random Access Memory Cells with Low-current Consumption.
  Dr. Peter Haring Bolivar, RWTH Aachen, Germany

 

Macroscopic Studies on Etching Characteristics of Phase Change Recording Films.
  Dr. Yumiko Anzai, Hitachi, Japan

 

Ultra-Multilayered Optical Recording Using Electro chromic Material.
  Dr. Ryuji Sato, NHK, Japan

 

Phase Change Memory: Rewritable Optical Disks and Electronic Non-volatile Memories.
  Dr. Takeo Ohta, ECD, Japan