top of page

E\PCOS 2004


The topics of E\PCOS 2004 has focused on High Speed Phase Change Recording and on the latest advances in Ovonic Memories.

Papers presented at E\PCOS 2004:

The Ovonic Cognitive Computer - a New Paradigm.
  Stanford R. Ovshinsky


HD DVD Optical Technology Overview.
  Dr. Hisashi Yamada,Toshiba, Japan


Optically-induced Photo-darkening and Photo-crystallisation in Amorphous Chalcogenides Films.
  Dr. Tomas Wagner, University of Parubice; Czech Republic


Phase Change Materials: from Crystal Structure to Kinetics.
  Dr. Johannes Kalb, Harvard University, USA


Amorphous-to-fcc Transition in Ge2Sb2Te5 Thin Films: Kinetics and Effects of Doping.
  Dr. Stefania Previtera, IMM, CNR, Italy


The Kinetic Analysis of Phase-Change Data Storage Media.
  Prof. A. Lindsay Greer, Cambridge University, U.K.


Crystal Structure and its Thermal Behaviour of Ge8Sb2Te11 (GeTe:SbTe3=8:1), one of the Materials Suitable for High-speed and High-density Phase Change Recording.
  Dr. Toshiyuki Matsunaga, Matsushita Techno Research, Japan


In-situ TEM study of the Crystallization of Fast-growth Doped SbxTe Alloys.
  Dr. ir. Bart Kooi, University of Groningen; The Netherlands


Dynamics of Rapid Melting and Resolidification of Sb-based Phase Change Materials in Optical Disk.
  Dr. Berangere Hyot, LETI, France


The Effect of Boundary Thermal Resistance on HD DVD-ARW Optical Recording Media.
  Dr. Sumio Ashida, Toshiba, Japan


Ferroelectrics of Chalcogenides and Optical Super-Resolution.
  Dr. Juji Tominaga, Centre of Applied Near-Field Optics Research


Plasmonic Near-field Phase Change Recording.
  Prof. Din-Ping Tsai, National Taiwan University, Tawian


High Speed Reversible Phase-change Optical Recording in GeSb-based Alloys.
  Dr. Dimitre Dimitrov, ITRI, Taiwan


Can we Reach Tbit/ Storage Densities with Phase-Change Media?.
  Prof. C. David Wright, University of Exeter, U.K.


Media Development for DVD+RW Phase Change Recording.
  Dr. ir. Derk Jan Adelerhof, Philips, The Netherlands


Advances in Phase Change Memory Technology.
  Dr. Enrico Varesi, STMircoelectronics, Italy


A Novel Cell Technology for Phase Change RAM.
  Dr. Sung Lea Cho, Samsung, South Korea


Investigation on Non-rotation and Non-volatile Phase Change Memory.
  Prof. Chong Tow Chong, University of Singapore, Singapore


Lateral Design for Phase Change Random Access Memory Cells with Low-current Consumption.
  Dr. Peter Haring Bolivar, RWTH Aachen, Germany


Macroscopic Studies on Etching Characteristics of Phase Change Recording Films.
  Dr. Yumiko Anzai, Hitachi, Japan


Ultra-Multilayered Optical Recording Using Electro chromic Material.
  Dr. Ryuji Sato, NHK, Japan


Phase Change Memory: Rewritable Optical Disks and Electronic Non-volatile Memories.
  Dr. Takeo Ohta, ECD, Japan

bottom of page