Library of E\PCOS
This Library contains all papers presented since the beginning of the European Phase Change and Ovonics Science Symposium.
In order to read the paper in PDF format, please click on the title of interest in the table below:Oral Papers presented at E\PCOS 2011
-
The Basis for Electronic Mechanisms in Ovonic Phase Change Memories
Stanford R. Ovshinsky, Ovshinsky Innovation LLC, USA -
Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical perspective
Jaakko Akola, Tampere University of Technology, Finland -
Large scale molecular dynamics simulations of phase change materials
Marco Bernasconi, University of Milano-Bicocca, Italy -
Local Structure, X-ray Absorption and Localization Properties of GST and GeTe-based Phase
Change Materials : an Ab Initio Simulation Approach.
Jean-Yves Raty, University of Liege, Belgium -
Disorder induced Localization in crystalline Phase Change Materials
Matthias Wuttig, RWTH Aachen University of Technology, Germany -
Topological insulating state in interfacial phase-change
memory
Junji Tominaga, National Institute of Advanced Industrial Science and Technology, Japan -
Structure of the amorphous phase and
the amorphisation mechanism in Ge-Sb-Te alloys
Alexander Kolobov, National Institute of Advanced Industrial Science and Technology, Japan -
Ordering in Crystalline Ge-rich Ge-Sb-Te Alloys:
A story of different length scales
Paul Fons, National Institute of Advanced Industrial Science and Technology, Japan -
Hard X-ray Photoelectron Spectroscopy of Crystalline and Amorphous Ge1Cu2Te3
Keisuke Kobayashi, HiSOR, Hiroshima University, and NIMS Beamline Station at Spring-8, Japan -
Cycling of line-cell phase-change random access memory:
Evolution of properties
Bart Kooi, University of Groningen, The Netherlands -
Phase change characteristics of Ge1Cu2Te3 films
Yuji Sutou, Tohoku University, Japan -
Thermally Stable, Low Current Consuming Gallium and Germanium
Chalcogenides for Consumer and Automotive Memory Applications
Dan Hewak, University of Southampton, UK -
Phase-change control of ferromagnetism
in GeTe-based phase change magnetic films
Xiang Shui Miao, Huazhong University of Science and Technology, China -
Understanding on Current-induced Crystallization Process and Faster
Set Write Operation Thereof in Non-Volatile Phase Change Memory
Dae-Hwan Kang, Samsung, Korea -
Influence of Dopants on the Crystallization Temperature, Crystal
Structure, Resistance, and Threshold Field for Ge2Sb2Te5 and GeTe
Phase Change Materials
Simone Raoux, IBM T. J. Watson Research Center, USA -
Local electrical characterization of laser-recorded marks in Ge2Sb2Te5
thin films using conductive-tip atomic force microscopy
Masud Mansuripur, University of Arizona, Tucson, USA -
Two contrastive rapid recrystallization mechanisms revealed in practically used phase-change recording materials
Toshiyuki Matsunaga, Panasonic, Japan -
GeTe-based Phase Change Memories:
Effect of stoechiometric variations and N or C addition
Veronique Sousa, CEA-LETI, France -
The Crystallization Behavior of Ga-Sb Materials as a Function of
Composition for Phase Change Random Access Memory
Huai-Yu Cheng, Macronix, Taiwan -
Properties of Low-Power Phase-Change Device
with GeTe/Sb2Te3 Superlattice Material
Toshimichi Shintani, National Institute of Advanced Industrial Science and Technology, Japan -
Material Selection through Band-alignment Study for PCRAM Integration
with GeTe/Sb2Te3 Superlattice Material
Rong Zhao, Data Storage Institute, Singapore -
Phase-Change Memory with Carbon Nanotube Electrodesl
Eric Pop, University of Illinois at Urbana-Champaign, USA -
In-situ TEM observation of Electrical Wind Force Assisted Amorphization in Ge2Sb2Te5 Phase
Change Nanowires
Ritesh Agarwal, University of Pennsylvania, USA -
Methodologies to Study the Scalability and Physics of
Phase Change Memory devices
Rakesh Jeyasingh, Stanford University, USA -
Giant Surface Plasmon Resonance Switching of Gold Nanoparticles
Based on Ultrafast Phase Change of GeSbTe
Toshiyuki Saiki, Keio University, Japan -
Status and Perspective of Chalcogenide PCM
in the Semiconductor Industry
Roberto Bez, Micron, Italy -
Size-dependent random-telegraph noise in phase-change memories
Daniele Ielmini, Politecnico di Milano, Italy -
Enabling Technologies for Multilevel Phase-Change
Memory
Haris Pozidis, IBM Research Zurich, Switzerland -
Subsystem and System-level Implications of PCM
Robert Haas, IBM Research Zurich, Switzerland
Invited Posters presented at E\PCOS 2011
-
Driving forces of mass transport in phase change materials
and their effect on device failures
Tae-Youl Yang, Seoul National University, Korea -
Selective Excitation of Ge-Te Bond by
Linearly-Polarized Femtosecond Pulse in GeTe/Sb2Te3 Superlattice
Kataro Makino, University of Tsukuba, Japan -
A 7-bit Readout Circuit in 90 nm CMOS for
Drift-Resilient Multi-Level Phase-Change Memory
Aravinthan Athmanathan, IBM Research Zurich, Switzerland -
Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films
deposited by Atomic Layer Deposition
Luca Perniola, CEA-LETI, France -
Stacked Chalcogenide Layers for Phase Change Memory
Santosh Kurinec, Rochester Institute of Technology, USA -
Effect of doping on global and local order in crystalline GeTe
Berangere Hyot, CEA-LETI, France -
Characteristics of SbTe and GeTe based Phase Change
Materials in Various Confined Cell Structure
Dong-Ho Ahn, Samsung, Korea -
Parallel Readout Technique of Roll-Type Multilayered Optical Memory
Masatoshi Tsuji, Shizuoka University, Japan -
Prospect for High-speed, High-density Phase-Change Memory Device with Gedoped
SbTe of a Tuned Composition
Zhe Wu, Korea Institute of Science and Technology, Korea -
Chalcogenide glass - carbon nanotube composite
Tomas Wagner, University of Pardubice, Czech Republic -
Hybrid functional study on liquid and amorphous structures of Ge2Sb2Te5
Seungwu Han, Seoul National University, Korea
Contributed Posters presented at E\PCOS 2011
-
Ab initio Molecular-dynamics Simulation of Crystal Nucleation in GST
Stephen Elliott, University of Cambridge, UK -
Combined density functional and reverse Monte
Carlo simulations of amorphous Ge15Te85
J. Kalikka, University of Jyväskylä, Finland -
Crystallization behavior of Si-doped GeTe phase change materials
Yuta Saito, Tohoku University, Japan -
Time and temperature dependence of the amorphous resistance of
phase-change line cells
B.J. Kooi, Materials Innovation Institute M2i and University of Groningen, The Netherlands -
Thermal conductivity measurements of Sb-Te alloys
by hot strip method
Rui Lan, Tokyo Institute of Technology, Japan -
Kinetic processes in Se-Te glassy system
Jiri Malek, University of Pardubice, Czech Republic -
Crystal growth front instabilities in Ge doped Sb films
Gert Eising , Zernike Institute for Advanced Materials and Materials Innovation institute M2i, University of Groningen, The Netherlands -
Structure and composition of Ge-Sb-Te thin films grown by molecular
beam epitaxy on Si(111) substrates
Alessandro Giussani, Paul Drude Institut für Festkörperelektronik, Germany -
Crystallization behavior of amorphous GeSbTe nonthermally amorphized
by femtosecond laser pulse irradiation
Kazuyuki Tajima, Keio University, Japan -
Atomic layer deposition of GeTe
Tiina Sarnet, University of Helsinki, Finland -
Local structure and physical properties of In3SbTe2: Characterizing a member of a fourth
family of phase change materials
Anbarasu Manivannan, RWTH Aachen University of Technology, Germany -
Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials
Daniel Krebs, IBM Zurich Research Laboratory, Switzerland -
Electrical characterization of
chalcogenide nanowires, self assembled by MOCVD
Roberto Fallica, IMM-CNR, Italy -
Investigation of the scalability limit and thermal stability of low current consuming, nanowire phase change memory cells for high density commercial applications
Behrad Gholipour, University of Southampton, UK
