Library of E\PCOS
This Library contains all papers presented since the beginning of the European Phase Change and Ovonics Science Symposium.
In order to read the paper in PDF format, please click on the title of interest in the table below:Papers presented at E\PCOS 2010
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New Transformative Possibilities for Ovonic Devices
Stanford R. Ovshinsky, Ovshinsky Innovation LLC, USA -
Non-stoichiometry in Phase Change Memory Materials
M. Frumar, Dep. General and Inorg. Chemistry and Res. Center of Univ. Pardubice, Studentská 95, 53210 Pardubice, Czech Rep. -
Phase-change technologies: from PCRAM to probe-storage to processors
C. D. Wright, School of Engineering, Computing and Mathematics; University of Exeter, England -
Controlling Charge Transport in Crystalline Phase Change Materials
M. Wuttig, I. Physikalisches Institut, RWTH Aachen University, Aachen, Germany -
Casimir forces and phase-change materials
B.J. Kooi, Materials innovation institute M2i and Zernike Institute for Advanced Materials, University of Groningen, The Netherlands -
Phase Change Meta-material and Device Characteristics
Junji Tominaga, National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba, Japan -
Effect of Ion Implantation on Crystallization Properties of Phase Change Materials
Simone Raoux, IBM T. J. Watson Research Center, New York, USA -
GeTe Encapsulated within Single-Walled Carbon Nanotubes
C.E. Giusca, Advanced Technology Institute, University of Surrey, United Kingdom -
Challenges in Colloidal Phase Change Nanoparticle Devices
Marissa A. Caldwell, Departments of Chemistry and Electrical Engineering, Stanford University, USA -
Phase Change Nanowires: Extremely Low Resistance Drift and Direct Observation of Field-Induced Nucleation and Switching
Ritesh Agarwal, Department of Materials Science and Engineering University of Pennsylvania, USA -
PRAM Technology: from Non Volatility to High Performances
D.H. Ahn, Semiconductor R&D Center, Samsung Electronics Co., Ltd, South Korea -
Electric-field-enhanced atomic transport in phase change materials as the origin of the set-stuck failure in PRAM
Young-Chang Joo, Department of Materials Science & Engineering, Seoul National Universityy, South Korea -
Multi-levels phase change memory using pulse modulation
Sumio Hosaka, Graduate School of Engineering, Gunma University, Japan -
The phase-transition in GeTe revisited: Local Versus Average Structure
P. Fons, Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science & Technology, Tsukuba, Japan -
Polymorphism in amorphous Ge2Sb2Te5: comparison of melt-quenched and as-deposited structures
J. Akola, Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany -
Phase change materials, a model system to study nucleation processes
Bong-Sub Lee, Department of Materials Science & Engineering, University of Illinois at Urbana-Champaign, Illinois, USA
Posters presented at E\PCOS 2010
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Study of Ge2Sb2Te5, GeTe and N-doped GeTe for application in the Phase-Change Random Access Memories (PCRAM)
Jean Claude Bastien , CEA/LETI, Grenoble, France -
Demonstration of a High-Speed Multi-Level Cell Phase-Change Memory Using Ge-doped SbTe
Gang Zhang , Electronic Materials Center, Korea Institute of Science and Technology, Seoul , South Korea -
Phase Change Alloys for Very High Temperature Data Retention Applicable for Automotive Applications
Charles Dennison, Ovonyx, Inc. Rochester Hills, MI 48309, USA -
Ultrafast phase change in Ge2Sb2Te5 superlattices monitored by coherent phonon spectroscopy
Muneaki Hase, National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba, Japan -
Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase
D. Ielmini , Dipartimento di Elettronica e Informazione, Politecnico di Milano and IU.NET, Italy -
Hard X-ray Photoelectron Spectroscopy, Chemical Bonding, and First Principle Calculations in Phase Change Memory Materials
K. Kobayashi , National Institute for Materials Science, Hyogo, Japan -
Raman spectra of amorphous phase change materials from first principles
M. Bernasconi , Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Milano, Italy -
Nanoscale writing and erasing of amorphous marks in a GeSbTe thin film with a gold nanoparticle by femtosecond laser irradiation
Toshiharu Saiki, Department of Electronics and Electrical Engineering, Keio University, Kanagawa, Japan -
GST, GeTe and C-doped GeTe materials for Phase Change Memory cells
V. Sousa , CEA, LETI, MINATEC, Grenoble, France -
Seeded Crystallisation and Enhanced Phase-Change Materials
Robert E. Simpson , National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba, Japan -
Phase Change Gallium and Germanium Chalcogenides for Optical, Electronic and Plasmonic Switching
D.W. Hewak , Optoelectronics Research Centre, University of Southampton, United Kingdom -
MOCVD GST for High Performance Phase Change Memory Devices
J. F. Zheng , ATMI Inc., Danbury, CT 06810, USA -
Phase Change Memory Technology for 90nm Embedded Non Volatile Memory Applications
Paola Zuliani, Technology R&D, STMicroelectronics, Agrate Brianza (MI), Italy -
Selective CVD deposition of phase change material alloys
Alejandro G. Schrotta, IBM T. J. Watson Research Center, Yorktown Heights, New York, USA -
Crystallization processes of eutectic Si-Te and Ge-Te phase change materials
Yuta Saito , Department of Materials Science, Tohoku University, Sendai, Japan -
Phase change behavior of Ge1Cu2Te3 thin films
Yuji Sutou , Department of Materials Science, Tohoku University, Sendai, Japan -
Towards ultra-high density scanning-probe memories using re-writeable phase-change media
L Wang , College of Engineering, Mathematics and Physical Sciences, University of Exeter, United Kingdom -
Gillespie type cellular automata approach for phase-change device modelling
Jorge Vazquez, College of Engineering, Mathematics and Physical Sciences, University of Exeter, United Kingdom -
Crystallization study of GeSb4 phase change material thin films
A. Bastard , CEA, LETI, MINATEC, Grenoble, France -
Exploiting optical near-fields for phase switching and nanopatterning
J. Siegel , Instituto de Optica, CSIC, Madrid, Spain -
Local structure of amorphous Ge8Sb2Te11
M. Krbal , National Institute of Advanced Industrial Science & Technology (AIST),Tsukuba, Japan -
Phase transitions in Ge1-xTex alloys
E. Carria , Dipartimento di Fisica ed Astronomia, Università di Catania, Catania, Italy -
Explosive crystallization in phase change thin films
Gert Eising , Zernike Institute for Advanced Materials, University of Groningen, The Netherlands. -
Molecular beam epitaxy of GST controlled by quadrupole mass spectrometry
Wolfgang Braun ,Paul-Drude-Institut f¨ur Festkoerperelektronik, Berlin, Germany -
Real structure of metastable Ge-Sb-Te and Ge-Bi-Te materials
M. N. Schneider , LMU Munich, Department of Chemistry, Munich, Germany
