Library of E\PCOS
This Library contains all papers presented since the beginning of the European Phase Change and Ovonics Science Symposium.
In order to read the paper in PDF format, please click on the title of interest in the table below:Papers presented at E\PCOS 2008
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The New Information Age
Stanford Ovshinsky, USA -
Recent Results of the Study of Phase Change Memory Materials
Miloslav Frumar, Purdubice Univ., Czech Republic -
Fundamental Size-Effects in Phase Change Nanowires
Ritesh Agarwal, University of Pennsylvania, USA -
Understanding of the fine stability of amorphous Ge2Sb2Te5 by the structural analyses
Toshiyuki Matsunaga,Panasonic, Japan -
Reversible resistance switching in Ge-Sb-Te thin films without amorphous-crystalline phase-change
Bart Kooi, University of Groningen, Netherlands -
Density functional simulations of Te-based phase change materials
Robert O. Jones, University of Jyväskylä, Finland -
Computer simulation of amorphous-crystal phase transformations of GST-225 memory material
S.R. Elliott, Cambridge Univ., UK -
The impact of a signal prossing technique on the near field recording performance
Ariyoshi Nakaoki, Sony, Japan -
Recent Progress of Phase Change Random Access Memory (PRAM)
Junsoo Bae, Samsung, Korea -
Nano- and Ultrafast Phase Change
Shi Luping, DSI, Singapore -
Atomic Displacement Induced by Valence and Core Level Excitations in Solids
Yosuke Kayanuma, Osaka Prifecture Univ., Japan -
Pressure-induced structural changes in phase-change materials
A. Kolobov, AIST, Japan -
The Bridge Structure for Advanced Phase Change Memory Investigations
Yi-Chou Chen, Macronix, Taiwan -
Scanning Probe-Based Phase-Change Terabyte Memories
David Wright, Exeter Univ., England -
Modeling of switching phenomena in phase change memory (PCM) devices
Daniele Ielmini , Milano Univ., Italy -
Time-resolved investigation of nanosecond crystal growth in rapid-phase-change
materials for digital versatile disc
Yoshihito Tanaka, Riken, Japan -
The origin of activation energy in phase-change materials
Jumji Tominaga, AIST, Japan -
Ab-initio simulation of amorphous Ge2Sb2Te5 and related binary chalcogenides
Marco Bernasconi, University of Milano-Bicocca, Italy -
Development Lines for Phase-Change Memory
Roberto Bez, Numonyx, Italy -
Scalability of thermal phase-change storage and memory
Hendrik Hamann, IBM T J Watson, USA -
Chemical synthesis and solution phase deposition of phase change materials
Delia Milliron, Lawrence Berkeley National Laboratory, USA -
Crystallization Times of As-deposited and Melt-quenched Amorphous Phase Change Materials
Simone Raoux, IBM, USA -
Unique amorphous structure of Ge2Sb2Te5 alloy
Zhimei Sun, Department of Materials Science and Engineering, Xiamen University, China -
Rewritable dual-layer recording with near-field coupled SIL system
Masahiro Birukawa, Panasonic, Japan -
Drift of programmed resistance in electrical phase change memory devices
Sergey Kostylev, Ovonyx Technologies, Inc, USA -
Phase Change Materials: The Importance of Resonant Bonding
Lencer, Aachen Univ., Germany
Posters presented at E\PCOS 2008
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Degradation Mechanism and Curing Method of Phase Change Memory (PCM)
Device Characteristics during Cyclic Programming
Suyoun Lee, Korea Institute of Science and Technology, Seoul 136-791, Korea -
Monte Carlo simulation of charge transport in amorphous GST
Enrico Piccinini, Advanced Research Center on Electronic Systems, and D epartment of Electronics, Computer Science and Systems, University of Bologna, I-40136 Bologna, Italy -
Reduction in crystallization time of Sb:Te films through addition of Bi
R. E. Simpson, Center for Applied Near-Field Optics Research (CAN-FOR), National Institute of Advanced Industrial Science and Technology, Ibaraki Tsukuba 305-8562, Japan -
Crystallization study of reamorphized-Ge2Sb2Te5 sandwiched by dielectric films
Takayuki Shima, Center for Applied Near-Field Optics Research (CAN-FOR), National Institute of Advanced Industrial Science and Technology, Ibaraki Tsukuba 305-8562, Japan -
Structural relaxation in chalcogenide-based phase change memories (PCMs):
from defect-annihilation kinetic to device-reliability prediction
S. Lavizzari, Dipartimento di Elettronica e Informazione, Politecnico di Milano and IU.NET, 20133 Milano, Italy -
Investigation on the improved superresolution effect by nitrogen addition in Ge-doped SbTe
Hyun Seok Lee, Thin Film Materials Research Center, Korea Institute of Science and Technology, Sungbuk-ku, Seoul 136-791, Korea -
Low power writing in lateral type phase-change memory
Sumio Hosaka, Department of Nano-Material Systems, Graduate School of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan -
Structural and Thermal Properties of Phase Change Materials in Nanometer Scale
Bong-Sub Lee , Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, USA -
Sub-nanosecond structural observations of the optical recording process
using time-resolved x-ray absorption spectroscopy
Paul Fons, Center for Applied Near-Field Optics Research (CAN-FOR), National Institute of Advanced Industrial Science and Technology, Ibaraki Tsukuba 305-8562, Japan -
Medium Long Term Thermal Stability of Flash Evaporated films with composition of Ge2Sb2Te5
Tomas Wagner, University of Pardubice, Faculty of Chemical Technology, Department of General and Inorganic Chemistry and Research Centre, Czech Republic -
RF magnetron sputtering of Se doped Ge-Sb-Te thin films
J. Gutwirth, University of Pardubice, Faculty of Chemical Technology, Department of General and Inorganic Chemistry and Research Centre, Czech Republic -
Comparison of laser induced crystallization process of undoped and Ag
doped Sb40S60 and Sb33S67 thin films
J. Gutwirth, University of Pardubice, Faculty of Chemical Technology, Department of General and Inorganic Chemistry and Research Centre, Czech Republic -
Optical and Electrical Propoerties of Sb-rich Sb-Se System Thin Films.
L. Hromadko, University of Pardubice, Faculty of Chemical Technology, Department of General and Inorganic Chemistry and Research Centre, Czech Republic -
Reduction of programming current density with isotropic PCM deep scaling.
L. Semyon D. Savransky, The TRIZ Experts , 6015 PepperTree Court, Newark, CA 94560, USA
