Library of E\PCOS
This Library contains all papers presented since the beginning of the European Phase Change and Ovonics Science Symposium.
In order to read the paper in PDF format, please click on the title of interest in the table below:Papers presented at E\PCOS 2007
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The Ovonic Phase Change Memory - Past, Present, Future
Stanford Ovshinsky, ECD, USA -
Making the ISOM Optical Memory Roadmap
Takeshi Maeda, Hitachi, Japan -
Progress and Perspective of Phase-Change Memory
Robert Bez, STMicroelectronics, Italy -
Study of phase-change recording based on the NA of 1.8 or larger
Ariyoshi Nakaoki, Sony Japan -
Media Technologies for 40GB Dual-layer Phase-change recording for
HD DVD System
Tsukasa Nakai, Toshiba, Japan -
Super-Resolution ROM disk with a semi-conductive InSb active
layer: influence of the crystalline microstructure
A. Berangere Hyott, Leti, France -
Controlling Material Properties in new Phase Change Alloys beyond
the pseudo-binary line
W. Welnic, RWTH Aachen, Germany -
Overview on the GeTe-Sb2Te3 pseudobinary crystalline phase
Toshiyuki Matsunaga, Matsushita, Japan -
Structural basis for fast phase change of DVD-RAM-Topological
order in the amorphous phase
Shinji Kohara, Jasrii, Japan -
Sub-nanosecond laser-induced structural changes in the phase
change material
Paul Fons, Center for Applied Near-Field Optics Research, Japan -
Thermal Properties of Atomically Controlled [GeTe/Sb2Te3]
Superlattice
Zhao Rong, Data Storage Institute, Singapore -
Thermal Properties of Atomically Controlled [GeTe/Sb2Te3]
Superlattice
Junji Tominaga, AIST, Japan -
Glass Transition and Crystallization in Phase Change Materials
M. Salinga , Aachen Univ., Germany -
Detecting Nuclei in Phase-change Materials by Fluctuation
Electron Microscopy
Bong-Sub Lee, Illinois Univ., US -
Physical modeling of conduction and switching mechanisms in phase
change memory cells
Daniele Ielmini , Milano Univ., Italy -
Program window of doped Sb2Te phase change line cells
Friso Jedema, NXP, Netherlands -
Programming Speed in Ovonic Unified Memory
Sergey Kostylev, Ovonyx Technologies,Inc., USA -
Characteristics of Phase Change Memory Devices based on Ge-doped
SbTe and its derivatives
Byung-Ki Cheong, KIST, Korea -
X-ray diffraction studies of phase change nanoparticles produced
by self-assembly-based lithographic techniques
Simone Raoux, IBM, USA -
Laser ablation TOF mass spectrometry analysis of clusters formed
from Ge2Sb2Te5 in plasma
Tomas Wagner, University of Pardubice, Czech Republic -
Resistance switching without phase-change in crystalline marks in
chalcogenide films
Ramanathaswamy Pandian , Groningen Univ., Netherlands -
Microprocessor and multi-state memory devices using phase-change
technology
David Wright, Exeter Univ., England
