Library of E\PCOS
This Library contains all papers presented since the beginning of the European Phase Change and Ovonics Science Symposium.In order to read the paper in PDF format, please click on the title of interest in the table below:
Papers presented at E\PCOS 2006
Why and How Phase-change Technology Alters Our Concept of
Dr. Stanford R. Ovshinsky, Energy Conversion Devices, Inc., USA
Electrical Switching in bulk chalcogenide glasses - the
correlation between switching behavior and other material
S. Asokan, Indian Institute of Science, India
Current Reduction in Ovonic Memory Devices.
W. Czubatyj, Ovonyx Technologies, USA
High Density Phase Change Recording for Second Generation Ultra
Density Optical .
Clare Davies Plasmon, United Kingdom
Ab initio-based simulations of electronic excitations in
chalcogenide glasses .
Prof. S.R. Elliot, University of Cambridge, United Kingdom
Super-Resolution Read Only Memory (ROM) Disc at the Blue
Berangere Hyot, LETI, France
Re-Writable DVDs:what makes phase-change materials work they do.
A.V Kolobov, Universit� Monpellier II, France
Resistance-change devices based on solid electrolytes.
Michael N. Kozicki, Arizona State University, USA
Progress of Phase Change Non Volatile Memory Devices.
A.L. Lacaita, Politecnico di Milano, Italy
High power and wide wavelenght range AlInGaN laser diodes.
Shinichi Nagahama, Nichia Corporation, Japan
High-speed DVD-RAM disk with a wide range of recording speed.
Kenji Narumi, Matsushita Electric Industrial Co. Ltd. (Panasonic), Japan
Phase Change media for high-density and high-speed recording.
Shuichi Ohkubo, NEC Corporation, Japan
Structural modeling of ovonic materials
Mihai Popescu, National Institute R&D for Materials Physics, Romania
Scaling properties of phase change nanostructures and thin films.
Simone Raoux, IBM Macronix Infineon, USA
Recent Progress in Understanding PC-Materials for Optical and
Christop Steimer, RWTH Aachen, Germany
A 130 nm Technology node Phase Change Memory using Oxygen doped
Norikatsu Takaura, Hitachi Central Research Lab, Japan
Superlattice-like Phase Change Random Access Memory.
Rong Zhao, Data Storage Institute, Singapore