Library of E\PCOS
This Library contains all papers presented since the beginning of the European Phase Change and Ovonics Science Symposium.
In order to read the paper in PDF format, please click on the title of interest in the table below:Papers presented at E\PCOS 2006
Invited Papers
-
Why and How Phase-change Technology Alters Our Concept of
Information.
Dr. Stanford R. Ovshinsky, Energy Conversion Devices, Inc., USA -
Electrical Switching in bulk chalcogenide glasses - the
correlation between switching behavior and other material
properties.
S. Asokan, Indian Institute of Science, India -
Current Reduction in Ovonic Memory Devices.
W. Czubatyj, Ovonyx Technologies, USA -
High Density Phase Change Recording for Second Generation Ultra
Density Optical .
Clare Davies Plasmon, United Kingdom -
Ab initio-based simulations of electronic excitations in
chalcogenide glasses .
Prof. S.R. Elliot, University of Cambridge, United Kingdom -
Super-Resolution Read Only Memory (ROM) Disc at the Blue
Wavelength.
Berangere Hyot, LETI, France -
Re-Writable DVDs:what makes phase-change materials work they do.
A.V Kolobov, Universit� Monpellier II, France -
Resistance-change devices based on solid electrolytes.
Michael N. Kozicki, Arizona State University, USA -
Progress of Phase Change Non Volatile Memory Devices.
A.L. Lacaita, Politecnico di Milano, Italy -
High power and wide wavelenght range AlInGaN laser diodes.
Shinichi Nagahama, Nichia Corporation, Japan -
High-speed DVD-RAM disk with a wide range of recording speed.
Kenji Narumi, Matsushita Electric Industrial Co. Ltd. (Panasonic), Japan -
Phase Change media for high-density and high-speed recording.
Shuichi Ohkubo, NEC Corporation, Japan -
Structural modeling of ovonic materials
Mihai Popescu, National Institute R&D for Materials Physics, Romania -
Scaling properties of phase change nanostructures and thin films.
Simone Raoux, IBM Macronix Infineon, USA -
Recent Progress in Understanding PC-Materials for Optical and
Electronic Storage.
Christop Steimer, RWTH Aachen, Germany -
A 130 nm Technology node Phase Change Memory using Oxygen doped
GeSbTe.
Norikatsu Takaura, Hitachi Central Research Lab, Japan -
Superlattice-like Phase Change Random Access Memory.
Rong Zhao, Data Storage Institute, Singapore
Contributed Papers
-
Predictiong the performance of electrical probe storage on
phase-change media.
Mustafa M. Aziz, University of Exeter, U.K. -
An experimental investigation on the origin of super-resolution
effects of Te-based chalcogenide semiconductor films.
Byung-ki Cheong, Korea Institute of Scinece and Technology, Korea -
Effect of Sn and Zn doping on Phase Change Materials for Optical
and Electrical Memories.
Dimitri Z. Dimitrov, Materials Research Labs, ITRI, Taiwan -
Local Annealing by E-Beam and in-Situ TEM of Amorphous
Crystalline Transition in Chalcogenide-Based Flims.
Kolosov V. Yu., Ural State Econmic University, Russia -
An experimental Investigation on the Origin of Super-resolution
Effects of Te based Chalcogenide Semiconducting Thin Films.
Hyun Seok Lee, Korea Institute of Scinece and Technology, Korea -
Phase Change Memory Device with U-shaped heater (PCM-U).
Young Sam Park, Components Lab ETRI, Korea -
Phase Change Materials for Super Resolution Microscopy.
S. Petit, Center for Applied Near-Field Optics Research, Japan -
Preparation and Investigation of Amorphous SnSe2 Thin Films with
Potential Switching Applications.
M. Popescu, National Institute R&D of Materials Physics, Romania -
A Study to Optimize Sb-Te Layer Preparation for Super-resolution
readout using PtOx Recodring Layer.
Takayuki Shima, Center for Applied Near-Field Optics Research, Japan -
Optical Routers based on Ovonic Phase Change Materials.
David Strand, Energy Conversion Devices, USA -
Phase Change Materials for Write-Once Blue Laser System.
Po-Fu Yen, Research Labs, ITRI, Taiwan -
in-Situ Growth of GeSB2Te5 Nanoparticles grown by Pulsed Laser
Depostion and their Phase Change Electrical Charactersitics for
Memory Applications.
H.R. Yoon, Ewha Womans University, Korea -
Novel Thermal Analysis helping the Development and Understanding
of HD DVD Rewritable Disc corresponding to higher transfer rate.
Kaiichiro Yusu, Toshiba Corporation, Japan
