Speaker Session at E\PCOS 2008
At E\PCOS 2008 in Prague, again 26 invited papers have given an insight into the latest technology achievements in phase change science:
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The New Information Age
Stanford Ovshinsky, USA -
Recent Results of the Study of Phase Change Memory Materials
Miloslav Frumar, Purdubice Univ., Czech Republic -
Fundamental Size-Effects in Phase Change Nanowires
Ritesh Agarwal, University of Pennsylvania, USA -
Understanding of the fine stability of amorphous Ge2Sb2Te5 by the structural analyses
Toshiyuki Matsunaga,Panasonic, Japan -
Polarity-dependent reversible resistance switching in Ge-Sb-Te phase-change thin films
Bart Kooi, University of Groningen, Netherlands -
Massively-parallel density functional simulations of phase-change materials: characterization
of the amorphous structure
Robert O. Jones, University of Jyväskylä, Finland -
Computer simulation of amorphous-crystal phase transformations of GST-225 memory material
S.R. Elliott, Cambridge Univ., UK -
The impact of a signal prossing technique on the near field recording performance
Ariyoshi Nakaoki, Sony, Japan -
Recent Progress of Phase Change Random Access Memory (PRAM)
Junsoo Bae, Samsung, Korea -
Nano- and Ultrafast Phase Change
Shi Luping, DSI, Singapore -
Atomic Displacement Induced by Valence and Core Level Excitations in Solids
Yosuke Kayanuma, Osaka Prifecture Univ., Japan -
Pressure-induced structural changes in phase-change materials
A. Kolobov, AIST, Japan -
The Bridge Structure for Advanced Phase Change Memory Investigations
Yi-Chou Chen, Macronix, Taiwan -
Scanning Probe-Based Phase-Change Terabyte Memories
David Wright, Exeter Univ., England -
Modeling of switching phenomena in phase change memory (PCM) devices
Daniele Ielmini , Milano Univ., Italy -
Time-resolved investigation of nanosecond crystal growth in rapid-phase-change
materials for digital versatile disc
Yoshihito Tanaka, Riken, Japan -
The origin of activation energy in phase-change materials
Jumji Tominaga, AIST, Japan -
Ab-initio simulation of amorphous Ge2Sb2Te5 and related binary chalcogenides
Marco Bernasconi, University of Milano-Bicocca, Italy -
Development Lines for Phase-Change Memory
Roberto Bez, Numonyx, Italy -
Scalability of thermal phase-change storage and memory
Hendrik Hamann, IBM T J Watson, USA -
Chemical synthesis and solution phase deposition of phase change materials
Delia Milliron, Lawrence Berkeley National Laboratory, USA -
Crystallization Speed of As-deposited and Melt-quenched Amorphous Phase Change Materials
Simone Raoux, IBM, USA -
Ab initio molecular dynamic study of chalcogenide alloys
Zhimei Sun, Department of Materials Science and Engineering, Xiamen University, China -
Near-field Rewritable Dual-layer Recording with SIL System
Masahiro Birukawa, Panasonic, Japan -
Drift of programmed resistance in electrical phase change memory devices
Sergey Kostylev, Ovonyx Technologies, Inc, USA -
Phase Change Materials: The Importance of Resonant Bonding
Lencer, Aachen Univ., Germany
